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Two-dimensional via pillar structure and method of manufacturing the same

A technology of through-hole pillars and conductors, which is applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as increasing the performance degradation of electronic devices

Inactive Publication Date: 2019-05-21
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, the resistance of the interconnect undesirably increases the performance degradation of the electronic device

Method used

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  • Two-dimensional via pillar structure and method of manufacturing the same
  • Two-dimensional via pillar structure and method of manufacturing the same
  • Two-dimensional via pillar structure and method of manufacturing the same

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Embodiment Construction

[0012] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component on or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which an additional component may be formed between the first component and the second component. components so that the first component and the second component may not be in direct contact with each other. In addition, the present invention may repeat reference numerals and / or characters in various embodiments. This repetition is for the sake of simplicity and clarity and does not in itself indicate a rel...

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Abstract

Exemplary embodiments for various via pillar structures include one or more first conductors in a first interconnect layer of a semiconductor stack interconnected with one or more second conductors ina second interconnect layer of the semiconductor stack. The one or more first conductors and / or the one or more second conductors within the first interconnect layer and the second interconnect layer, respectively, can traverse multiple directions. In some situations, this allows multiple interconnections to be utilized to interconnect the one or more first conductors and the one or more second conductors. These multiple interconnections can reduce resistance between the one or more first conductors and the one or more second conductors thereby improving performance of signals flowing betweenthe one or more first conductors and the one or more second conductors. The embodiments of the invention further provide a method of manufacturing the via pillar structure.

Description

technical field [0001] Embodiments of the present invention generally relate to the semiconductor field, and more specifically, relate to a two-dimensional via column structure and a manufacturing method thereof. Background technique [0002] Continuous improvements in semiconductor manufacturing processes allow manufacturers and designers to create smaller, more powerful electronic devices. The semiconductor manufacturing process has developed from the 10μm semiconductor manufacturing process achieved around 1971 to the 22nm semiconductor manufacturing process achieved around 2012. The semiconductor device manufacturing process is expected to further develop to the 5nm semiconductor manufacturing process around 2019. However, with each advance in semiconductor manufacturing processes, new challenges in creating integrated circuits have been discovered. Many times, semiconductor fabrication processes dictate one or more electronic design constraints that impose on the fabr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/522H01L23/528H01L21/768
CPCH01L23/528H01L23/5226H01L21/76877H01L21/7685H01L21/76846H01L27/0611H01L23/5283H01L23/5386H01L23/5384
Inventor 顾钧尧陈文豪余明道
Owner TAIWAN SEMICON MFG CO LTD