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Image sensor and forming method thereof

An image sensor and graphic technology, applied in the direction of radiation control devices, etc., can solve the problems affecting the performance of the image sensor, the large size of the grid layer, etc., and achieve the effect of improving performance and increasing the amount of incident light

Inactive Publication Date: 2019-06-07
HUAIAN IMAGING DEVICE MFGR CORP
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  • Claims
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Problems solved by technology

[0004] In the image sensor, the grid layer is used to isolate the filter layer to reduce the crosstalk between adjacent pixel units. However, with the improvement of device integration, the density of pixel units in the image sensor increases, and the size of the grid layer is larger. Affects the performance of the image sensor

Method used

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  • Image sensor and forming method thereof

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Embodiment Construction

[0021] As mentioned in the background, prior art image sensors perform poorly.

[0022] figure 1 is a schematic diagram of a cross-sectional structure of an image sensor embodiment, please refer to figure 1 , the image sensor includes: a plurality of pixel units located on the surface of a substrate 100, the pixel units include: an interconnection layer 130, a photosensitive structure 110 and a photosensitive structure, and the substrate 100 has opposite first and second surfaces , the photosensitive structure 110 is located in the substrate 100, the interconnection layer 130 is in contact with the first surface of the substrate 100, the light receiving structure is located on the second surface of the substrate 100, and the light receiving structure includes a lens layer 160, The filter layer 150 and the grid layer 140, the lens layer 160 is located on the surface of the filter layer 150, the grid layer 140 is located between the adjacent filter layers 150; the image sensor ...

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Abstract

The invention discloses an image sensor and a forming method thereof. The method comprises the steps that a substrate is provided, wherein the substrate comprises a pixel region and an isolation region, the pixel region is adjacent to the isolation region, and the isolation region surrounds the pixel region; a photosensitive structure is formed in the pixel region of the substrate; an initial gridlayer is formed on the surface of the isolation region of the substrate, wherein an initial groove exposed out of the pixel region is formed in the initial grid layer; and the side wall of the initial grid layer is thinned, so that a grid layer is formed on the surface of the isolation region, and a groove exposed out of the pixel region is formed in the grid layer. Through the method, the performance of the image sensor is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an image sensor and a forming method thereof. Background technique [0002] An image sensor is a semiconductor device that converts light signals into electrical signals. Image sensors are classified into complementary metal oxide (CMOS) image sensors and charge coupled device (CCD) image sensors. CMOS image sensor has the advantages of simple process, easy integration with other devices, small size, light weight, low power consumption and low cost. At present, CMOS image sensors have been widely used in still digital cameras, digital video cameras, medical imaging devices, and automotive imaging devices. [0003] CMOS image sensors include front illuminated (FSI) image sensors and back illuminated (BSI) image sensors. In a back-illuminated image sensor, light is incident on photodiodes in the image sensor from the back of the image sensor, thereby converting light e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
Inventor 孟俊生李志伟黄仁德
Owner HUAIAN IMAGING DEVICE MFGR CORP
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