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Light-sensing semiconductor unit, light-sensing semiconductor array and light-sensing system

A semiconductor and optical sensing technology, which is applied in the direction of semiconductor devices, electrical components, radiation control devices, etc., can solve the problems of inability to maximize, convert photogenerated current efficiency, and low sensitivity

Active Publication Date: 2020-12-29
深圳市环宇鼎鑫科技有限公司
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Problems solved by technology

[0004] In view of this, an embodiment of the present invention provides a light-sensing semiconductor unit, a light-sensing semiconductor array, and a light-sensing system, aiming to solve the problem that the absorption of photo-generated carriers by using traditional diodes cannot be maximized, so that the conversion efficiency of photo-generated current and the problem of low sensitivity

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Embodiment Construction

[0034] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0035] The photo-sensing semiconductor unit provided by the embodiment of the present invention includes a substrate with a second conductivity type; a first doped region of the first conductivity type located on the substrate; a second conductive region located on the first doped region. A second doped region and a third doped region of type; a fourth doped region of the first conductivity type located above the second doped region; used to isolate the first doped region and the fourth doped region, and The isolation structure of the isolation structure isolating the third doped region and the fou...

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Abstract

The invention discloses an optical sensing semiconductor unit, comprising a substrate with a second conductive type; a first doping region which is located on the substrate and is a first conductive type; second doping regions and a third doping region which are located on the firs doping region and are the second conductive type; fourth doping regions which are located on the second doping regionand are the first conductive type; and an isolation structure which is used for isolating the first doping region and the fourth doping regions, and isolating the third doping region and the fourth doping regions. Compared with conventional design of an exhaust region of a diode, the design of two exhaust regions has the advantage that efficiency of absorbing photon-generated carriers is greatlyimproved; and a specific bias voltage is applied outside of the two exhaust regions, two exhaust expansion regions can be specifically and maximally expanded, but punch-through effect is not formed, in this way, data information under different voltages and photon-generated carrier absorption efficiency can be formed and optical resolution sensitivity can be improved.

Description

technical field [0001] The invention belongs to the technical field of light-sensing semiconductors, and in particular relates to a light-sensing semiconductor unit, a light-sensing semiconductor array and a light-sensing system. Background technique [0002] At present, in the application of photosensitive sensors, light detection is mainly used in the sensing and intelligent control of the Internet of Things. Because the photodiode or triode manufactured on the silicon process is low in manufacturing cost, and it is easy to integrate into the CMOS process to cooperate with the amplification and readout circuit to form an integrated chip, so the current photodetection device is constantly evolving from a discrete device to one with an intelligent calibration circuit. SoC. Since the application field of ambient light intensity detection is very broad, the existing inventions and technologies all involve the detection of ambient light intensity. [0003] In a typical techni...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L27/144
Inventor 宇思洋
Owner 深圳市环宇鼎鑫科技有限公司
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