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An off-line detection method for non-patterned surface defects

An off-line detection and non-pattern technology, which is applied in the direction of optical testing for defects/defects, can solve the problem of high cost, achieve the effect of saving detection cost and improving resolution sensitivity

Active Publication Date: 2014-10-01
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, the technical problem solved by the present invention is: as the size of the particles or holes to be detected shrinks, the physical conditions of the beam detector need to be changed, and the cost is too high

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  • An off-line detection method for non-patterned surface defects
  • An off-line detection method for non-patterned surface defects
  • An off-line detection method for non-patterned surface defects

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specific Embodiment 1

[0022] Combine below Figure 2~3 The cross-sectional schematic diagram of a semiconductor sample for off-line detection of non-patterned surface defects is a detailed description of the specific steps of the semiconductor sample preparation method for off-line detection of non-patterned surface defects proposed by the present invention.

[0023] Step 101, depositing a silicide 302 with a high refractive index and low absorption coefficient on the surface of the non-patterned thin film or dielectric layer 201 on the device surface of the wafer, to obtain the following image 3 the structure shown;

[0024] In this step, first provide the figure 2 The wafer 100 shown has a non-patterned film or dielectric layer 201, the surface defect 202 of the non-patterned film or dielectric layer 201 is particles or holes; the method for depositing silicide 302 on the surface of the non-patterned film or dielectric layer 201 It can be a deposition method commonly used in the prior art suc...

specific Embodiment 2

[0031] Step 201, coating an organic substance with a high refractive index and low absorption coefficient on the surface of the non-patterned thin film or dielectric layer on the device surface of the wafer;

[0032] In this step, the organic matter with high refractive index and low absorption coefficient can be coated on the surface of the non-patterned film or dielectric layer by spin coating. The organic matter can be photoresist (PR) or bottom anti-reflective coating (BARC), which are easy to use. Removal by chemical cleaning; the range of refractive index (n1) of organic matter to incident light is greater than or equal to 1.5, for example: 1.5, 1.7 or 2; the range of absorption coefficient (k) of organic matter to incident light is less than or equal to 0.01, such as: 0.01 , 0.009 or 0.008; the thickness of the coated organic matter ranges from 50 angstroms to 5000 angstroms, for example: 50 angstroms, 200 angstroms or 5000 angstroms, to prevent the absorption of inciden...

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Abstract

The invention provides a method for off-line detection of non-patterning surface defects. The method comprises the following steps of 1, preparing a film layer as a medium having a high refractive index and a low absorption coefficient k on the surface of a wafer with a non-patterning wafer surface or with a non-patterning film or medium layer so that a semiconductor sample is obtained, wherein the wafer is used for off-line detection, 2, detecting surface defects of the non-patterning wafer surface or the non-patterning film or medium layer of the semiconductor sample by an optical detection method, and 3, increasing scattering intensity of the surface defects according to the characteristic of wavelength decreasing of incident light in a high-refractive index medium. The method for off-line detection of non-patterning surface defects can improve the sensitivity of off-line detection of non-patterning surface defects without a change of wavelength of incident light transmitted by a light source of a detection device, and other physical conditions, and can save a detection cost.

Description

technical field [0001] The invention relates to a semiconductor test method, in particular to an off-line detection method for non-patterned surface defects. Background technique [0002] The existing semiconductor manufacturing is mainly to make various semiconductor devices on the device surface of the wafer. The main steps in the semiconductor manufacturing process include: depositing a thin film or a dielectric layer on the device surface of the wafer with a substrate, and after photolithography. Etching the thin film or dielectric layer to pattern it to form a semiconductor device structure, chemical mechanical polishing to planarize the wafer surface, etc. Wafers complete different processes in different equipment according to the semiconductor manufacturing process. In order to improve the yield rate of semiconductor devices in actual production, it is often necessary to know the status of the equipment used in each process and the process control through offline tes...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/95
Inventor 胡华勇林益世
Owner SEMICON MFG INT (SHANGHAI) CORP
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