Light-sensing semiconductor unit and light-sensing semiconductor array

Abstract

A photo-sensing semiconductor unit, comprising: a substrate; a first doped region of a first conductivity type located on the substrate; a second doped region of a second conductivity type located on the first doped region a doping region; a third doping region of the first conductivity type located above the second doping region; and an isolation structure for isolating the first doping region and the third doping region. Two depletion regions are formed, and the photogenerated carriers injected into these two depletion regions can be swept out by the built-in electric field, forming a photoconductive current effect. The design of two depletion regions greatly improves the efficiency of absorbing photogenerated carriers compared with the design of one depletion region in traditional diodes; secondly, implementing a specific bias voltage outside the two depletion regions can extend the two depletion regions The region-specific maximum expansion without forming punch-through effect can form data information of different voltages and photogenerated carrier absorption efficiencies, which can improve the light resolution sensitivity.

Description

technical field [0001] The invention belongs to the technical field of light-sensing semiconductors, in particular to a light-sensing semiconductor unit and a light-sensing semiconductor array. Background technique [0002] At present, in the application of photosensitive sensors, light detection is mainly used in the sensing and intelligent control of the Internet of Things. Because the photodiode or triode manufactured on the silicon process is low in manufacturing cost, and it is easy to integrate into the CMOS process to cooperate with the amplification and readout circuit to form an integrated chip, so the current photodetection device is constantly evolving from a discrete device to one with an intelligent calibration circuit. SoC. In a typical technical solution, a traditional diode is used as a photosensitive device unit, and the traditional diode cannot maximize the absorption of photogenerated carriers, resulting in low efficiency and sensitivity in converting pho...

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Problems solved by technology

[0003] In view of this, an embodiment of the present invention provides a light-sensing semiconductor unit and a light-sensing semiconductor array, aiming to solve the problem that the absorption of photo-generated carriers by using traditional diodes cannot be maximized, so that the conversion efficiency and sensitivity of photo-generated currents are low. The problem

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