Light sensing semiconductor unit and light sensing semiconductor array

Abstract

The invention discloses a light sensing semiconductor unit, which comprises a substrate; a first doped region of a first conductivity type over the substrate; a second doped region of a second conductivity type over the first doped region; a third doped region of the first conductivity type over the second doped region; and an isolation structure for isolating the first doped region from the thirddoped region. Two depletion regions are formed, and photon-generated carriers which are driven into the two depletion regions can be swept out by the built-in electric field to form a photoconductivecurrent effect. Compared with the traditional diode with one depletion region, the design of the two depletion regions greatly improves the efficiency of absorbing photon-generated carriers; secondly, specific bias voltage is applied outside the two depletion regions, so that the two depletion extension regions can be expanded specifically and maximally, but no punchthrough effect is formed, different voltages and data information of photon-generated carrier absorption efficiency can be formed, and the light resolution sensitivity can be improved.

Description

technical field [0001] The invention belongs to the technical field of light-sensing semiconductors, in particular to a light-sensing semiconductor unit and a light-sensing semiconductor array. Background technique [0002] At present, in the application of photosensitive sensors, light detection is mainly used in the sensing and intelligent control of the Internet of Things. Because the photodiode or triode manufactured on the silicon process is low in manufacturing cost, and it is easy to integrate into the CMOS process to cooperate with the amplification and readout circuit to form an integrated chip, so the current photodetection device is constantly evolving from a discrete device to one with an intelligent calibration circuit. SoC. In a typical technical solution, a traditional diode is used as a photosensitive device unit, and the traditional diode cannot maximize the absorption of photogenerated carriers, resulting in low efficiency and sensitivity in converting pho...

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Problems solved by technology

[0003] In view of this, an embodiment of the present invention provides a light-sensing semiconductor unit and a light-sensing semiconductor array, aiming to solve the problem that the absorption of photo-generated carriers by using traditional diodes cannot be maximized, so that the conversion efficiency and sensitivity of photo-generated currents are low. The problem

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