Plasma processing system and operation method thereof

Abstract

The invention provides a plasma processing system. The plasma processing system comprises a transmission cavity, wherein the transmission cavity comprises a plurality of side walls; each side wall isconnected with a plurality of processing cavities; each processing cavity comprises a base, wherein a center point is arranged on the base; at least two processing cavities connected to the same sidewall form a processing cavity group, wherein a first distance is formed between the center points of the two bases in the first processing cavity group, and a second distance is formed between the center points of the two bases in the second processing cavity group, wherein the first distance is larger than the second distance; the transmission cavity comprises a mechanical transmission device, and the base comprises two mechanical arms capable of moving independently; and the two mechanical arms comprise a plurality of rotating shafts and a plurality of rotating arms, wherein the far end of the rotating arm at the uppermost part of each mechanical arm further comprises an end effector for grabbing substrates. The mechanical transmission device can pick and place the substrates from the processing cavity groups with the first distance and the second distance.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a plasma processing system, in particular to a design and operation method of a mechanical transmission device in the plasma processing system. Background technique [0002] Semiconductor chips are increasingly widely used in various electronic devices. The semiconductor chip processing process requires a large number of plasma processors. These processors will perform plasma etching, chemical vapor deposition and other processes on the substrate to be processed. Various processing chambers are required in the plasma processing process. For example, the etching and chemical vapor deposition mentioned in the above-mentioned processes need to perform corresponding processing chambers for these processes. Others such as photoresist removal (strip) and coating Covering also requires a special processing chamber. The substrate is sent from the atmospheric environment ...

AI Technical Summary

Problems solved by technology

However, arranging processing chambers with different functions in the same plasma processing system needs to solve new problems. The internal space and external dimensions of processing chambers with different functions will be different, which will cause two The distance between the center points of two side-by-side plasma processing chambers will be different. The original manipulator in the transfer chamber is designed to pick and place two processing chambers with a fixed center point distance, so the original manipulator cannot be used to complete the new plasma processing system. mission requirements

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