Unlock instant, AI-driven research and patent intelligence for your innovation.

Charge Pump and Phase Locked Loop

A charge pump and electrode technology, applied in electrical components, conversion equipment without intermediate conversion to AC, automatic power control, etc., can solve problems such as narrow control voltage range, charge pump function and noise deterioration.

Active Publication Date: 2020-11-06
MEDIATEK INC
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, a larger drain-source voltage means that the control voltage for the subsequent VCO has a narrower range
This narrow headroom problem can be made worse if the charge pump is used in low voltage applications (i.e. low supply voltage) and the charge pump functionality and noise can be degraded

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Charge Pump and Phase Locked Loop
  • Charge Pump and Phase Locked Loop
  • Charge Pump and Phase Locked Loop

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] Certain terms are used throughout the following description and claims to refer to particular system components. As will be understood by those skilled in the art, manufacturers may refer to components by different names. This document does not intend to distinguish between components that have different names but have the same function. In the following discussion and claims, the terms "comprises" and "comprises" are used in an open-ended fashion and therefore should be construed to mean "including but not limited to...". The term "coupled" is intended to mean an indirect or direct electrical connection. Thus, if a first device couples to a second device, that connection may be through a direct electrical connection, or through an indirect electrical connection via other devices and connections.

[0022] figure 1 is a schematic diagram illustrating a charge pump 100 according to one embodiment of the present invention. Such as figure 1 As shown, the charge pump 10...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An embodiment of the present invention provides a charge pump and a phase-locked loop. The charge pump includes: a pull-up circuit for selectively providing charges to the output terminal of the charge pump, wherein the pull-up circuit includes: a first a transistor; a first capacitor coupled to one electrode of the first transistor; and a switched capacitor circuit coupled between a supply voltage and the other electrode of the first transistor for boosting the first transistor The voltage of the other electrode to charge the first capacitor via the first transistor, after which charging the first capacitor and the output of the charge pump are in charge-distributing operation. By using the technical solution of the invention, the voltage at the output end of the charge pump can have a larger range.

Description

technical field [0001] The present invention relates generally to charge pumps, and more particularly to charge pumps and phase locked loops with level shifting mechanisms. Background technique [0002] A conventional charge pump usually includes two current sources for charging and discharging an output node to generate an appropriate control voltage for a subsequent voltage-controlled oscillator (VCO) to generate an output clock signal. The two current sources are generally realized by P-type transistors and N-type transistors respectively, and the drain-to-source voltage of the P-type transistors or N-type transistors is usually designed to be larger to have lower noise. However, a larger drain-source voltage means that the control voltage for the subsequent VCO has a narrower range. This narrow headroom problem may become worse if the charge pump is used in low voltage applications (ie low supply voltage), and the function and noise of the charge pump may be degraded. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H02M3/07H03L7/085
CPCH02M3/07H03L7/085H03L7/0895H03L7/099H03L7/0896
Inventor 薛育理沈致贤洪兆庆黄柏钧
Owner MEDIATEK INC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More