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plasma generator

A plasma and generating device technology, applied in the direction of plasma, discharge tube, electrical components, etc., can solve the problem of difficult large-area processing of the device

Active Publication Date: 2021-09-14
KOREA RES INST OF STANDARDS & SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this device is difficult to handle large areas

Method used

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Embodiment Construction

[0040] The plasma generating device according to the exemplary embodiment may change plasma characteristics according to a spherical cavity capable of generating plasma at a low pressure, a size of a hole connected to the cavity, and external power. Thus, the plasma generating device may be suitable for use in UV (or EUV) sources, plasma thrusters, devices for measuring plasma spectra of gases, industrial plasma sources such as semiconductors, and the like.

[0041] The plasma generating device according to the exemplary embodiment utilizes bounce resonance of plasma.

[0042] Formula 1):

[0043]

[0044] where n represents a positive integer greater than or equal to 1, ω represents the angular frequency of the RF power, L represents the diameter of the cavity, and v th represents the average velocity of electrons. Therefore, when the diameter of the cavity, the temperature and average velocity of the electrons, and the energy of the electrons are given, the driving freq...

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Abstract

A plasma generating device according to an embodiment of the present invention includes a plasma generating unit. The plasma generating unit has a spherical or elliptical cavity. The plasma generation unit generates plasma in the cavity by bouncing and resonating electrons by receiving RF power. The cavity includes a plasma extraction hole such that the cavity communicates with an external space.

Description

technical field [0001] The present disclosure relates to a plasma generating device, and more particularly, to a plasma generating device having a spherical cavity in which electrons bounce and resonate with respect to the cavity. Background technique [0002] The critical dimensions of semiconductor processes using plasmas have decreased. For capacitively coupled plasma (CCP: capacitively coupled plasma) or inductively coupled plasma (ICP: inductively coupled plasma) widely used at present, it is difficult to perform a semiconductor process with a reduced critical dimension. [0003] First, when capacitively coupled plasma or inductively coupled plasma is used, atomic-level fine machining is difficult because the process should be performed at high electron density. [0004] Second, damage occurs due to collisions and charging of energetic ions. [0005] In order to solve the above-mentioned problems, a novel plasma processing technology having a significantly lower press...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32H05H1/46
CPCH05H1/46H01J37/32082H01J37/32174H01J37/3244H01J37/32458H01J37/32715H01J37/32834H01J37/32165H01J37/32816H05H1/4645
Inventor 李孝昶金贞衡成大鎭
Owner KOREA RES INST OF STANDARDS & SCI