Key structure
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- DARFON ELECTRONICS (SUZHOU) CO LTD
- Publication Date
- 2019-08-30
Smart Images

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Abstract
Description
technical field
[0001] The invention relates to a key structure, and in particular to a key structure with a conductive structure. Background technique
[0002] Most of the traditional button structures use elastic bodies to squeeze the membrane switch layer, so that the originally separated upper and lower electrodes in the membrane switch layer contact to generate a trigger signal. The membrane switch layer itself is a soft structure, so to make the upper and lower electrodes of the membrane switch layer contact, it is necessary to overcome the resistance of the material of the membrane switch layer itself, so that the upper and lower electrodes can approach and contact. However, due to the need to overcome the resistance of the material of the membrane switch layer itself, coupled with the fatigue problem of the material of the membrane switch layer itself, the triggering reliability of the conventional button structure is not good. Contents of the invention
[0003] T...