Key structure

A key and keycap technology, applied in the field of key structures with conductive structures, can solve the problems of membrane switch layer fatigue, poor trigger reliability, etc.

Active Publication Date: 2019-08-30
DARFON ELECTRONICS (SUZHOU) CO LTD +1
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the need to overcome the resistance of the material of the membrane switch layer itself, coupled with the fatigue pro

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Key structure
  • Key structure
  • Key structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0051] Please refer to Figure 1A to Figure 2C , Figure 1A An exploded schematic view of the key structure 100 according to the first embodiment of the present invention is shown, Figure 1B drawn in accordance with this Figure 1A A combined schematic diagram of the key structure 100 (in an unpressed state), Figure 1C draw Figure 1B The key structure 100 omits the schematic diagram of the keycap, Figure 1D draw Figure 1C A top view of the key structure 100, Figure 1E draw Figure 1D The sectional view of the key structure 100 along the direction 1E-1E', and Figure 1F draw Figure 1D The sectional view of the button structure 100 along the direction 1F-1F', Figure 2A draw Figure 1A A three-dimensional schematic diagram of the button structure 100 in a pressed state, Figure 2B draw Figure 2A a top view of the key structure 100, and Figure 2C draw Figure 2B The cross-sectional view of the button structure 100 along the direction 2C-2C'.

[0052] Such as ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a key structure. The key structure includes a key cap, a circuit board, a lifting mechanism and a conductive rack, wherein the circuit board includes a first connection pad anda second connection pad, the lifting mechanism is arranged between the circuit board and the key cap, the key cap moves up and down through the lifting mechanism relative to the circuit board, the conductive rack is arranged on the lifting mechanism to move up and down along the lifting mechanism, the conductive rack includes a first conductive portion and a second conductive portion which are respectively arranged on the first connection pad and the second connection pad, a motion path of the first conductive portion and a motion path of the second conductive portion respectively reach the first connection pad and the second connection pad, when the first conductive portion and the second conductive portion respectively contact the first connection pad and the second connection pad, thefirst connection pad, the first conductive portion, the second conductive portion and the second connection pad form a crossing current path.

Description

technical field [0001] The invention relates to a key structure, and in particular to a key structure with a conductive structure. Background technique [0002] Most of the traditional button structures use elastic bodies to squeeze the membrane switch layer, so that the originally separated upper and lower electrodes in the membrane switch layer contact to generate a trigger signal. The membrane switch layer itself is a soft structure, so to make the upper and lower electrodes of the membrane switch layer contact, it is necessary to overcome the resistance of the material of the membrane switch layer itself, so that the upper and lower electrodes can approach and contact. However, due to the need to overcome the resistance of the material of the membrane switch layer itself, coupled with the fatigue problem of the material of the membrane switch layer itself, the triggering reliability of the conventional button structure is not good. Contents of the invention [0003] T...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01H13/705H01H3/12
CPCH01H3/125H01H13/705H01H2221/04H01H2221/044
Inventor 张立德陈志宏
Owner DARFON ELECTRONICS (SUZHOU) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap