Data storage method and device and memory

A data storage device and data storage technology, applied in the direction of electrical digital data processing, input/output process of data processing, instruments, etc., can solve the problem that the memory FTL management method cannot dynamically adjust the storage mode, etc., to achieve superior performance, data reading The effect of fast writing speed and slow reading and writing speed

Pending Publication Date: 2019-11-05
BIWIN STORAGE TECH CO LTD
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  • Abstract
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Problems solved by technology

[0004] The main purpose of the present invention is to propose a data storage method aimed at solving the problem that the existing memory FTL management method cannot dynamically adjust the storage mode according to the usage of the product

Method used

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  • Data storage method and device and memory
  • Data storage method and device and memory
  • Data storage method and device and memory

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Embodiment Construction

[0047] Embodiments of the present invention will be described in detail below, examples of which are shown in the drawings, wherein like reference numerals designate like elements or elements having the same function throughout. The embodiments described below by referring to the accompanying drawings are exemplary and are intended to explain the present invention, but cannot be construed as limitations to the present invention. Based on the embodiments in the present invention, those of ordinary skill in the art have no creative work All other embodiments obtained under the premise all belong to the protection scope of the present invention.

[0048] In order to solve the above-mentioned technical problems, the present invention proposes a data storage method, by using the method to realize the management of the memory, the service life can be guaranteed while ensuring high-efficiency reading and writing of data. The memory is all in SLC mode at the beginning, and during the ...

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Abstract

The invention discloses a data storage method which comprises the following steps: dividing all storage blocks of a memory into SLC storage areas, and writing data through the SLC storage areas; counting the erasing times of each storage block, and determining a reference threshold value of storage mode switching; and converting the storage blocks of which the erasing times are greater than the reference threshold into TLC storage areaS. Meanwhile, the invention also provides a data storage device and a memory. Based on the data storage method provided by the invention, the service life can beensured while high-efficiency data reading and writing are ensured.

Description

technical field [0001] The invention relates to the technical field of flash memory, in particular to a data storage method, device and memory. Background technique [0002] Flash memory is composed of blocks, each block contains several pages, and each page can store several bytes of data. For TLC-type flash memory, each individual block can be designated as SLC mode or TLC mode, and then erase, write and read the pages therein. When a block runs in SLC mode, it has the advantages of fast read and write speed, stable storage and long service life, but the number of storage pages of this block will be reduced, resulting in the actual used capacity not meeting the standard; when a block runs in TLC mode , the data cannot be directly written into the TLC, the data must be written into the SLC first, and then moved to the TLC, so for the TLC, although its reading speed is consistent with that of the SLC, there is one more operation step to make the writing The speed is slower...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06
CPCG06F3/0616G06F3/064G06F3/0644G06F3/0647G06F3/0679
Inventor 孙成思孙日欣李振华叶欣
Owner BIWIN STORAGE TECH CO LTD
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