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Sensor mark and method of manufacturing sensor mark

A sensor and marking technology, which is applied in the direction of instruments, scientific instruments, photometry, etc., can solve the problems of sensor measurement capability degradation, sensor marking degradation, imaging errors, etc.

Active Publication Date: 2019-11-08
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0018] Corrosion of material in the sensor marking layer is undesirable as it would degrade the sensor marking and thus the ability of the sensor to make measurements, and also introduce particles into the immersion liquid which would cause imaging errors

Method used

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  • Sensor mark and method of manufacturing sensor mark
  • Sensor mark and method of manufacturing sensor mark
  • Sensor mark and method of manufacturing sensor mark

Examples

Experimental program
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Embodiment Construction

[0048] Herein, the terms "radiation" and "beam" are used to encompass all types of electromagnetic radiation, including ultraviolet radiation (eg, having a wavelength of 365nm, 248nm, 193nm, 157nm or 126nm).

[0049] The terms "reticle", "mask" or "patterning device" as used herein may be broadly interpreted to refer to a general patterning device that can be used to impart a patterned cross-section to an incident radiation beam, the patterned cross-section Corresponds to the pattern to be created in the target portion of the substrate. The term "light valve" may also be used in this context. In addition to classical masks (transmissive or reflective, binary, phase-shifted, hybrid, etc.), examples of other such patterning devices include:

[0050] - Programmable mirror arrays; more information on such mirror arrays is given in US5,296,891 and US5,523,193, which are hereby incorporated by reference; and

[0051] - Programmable LCD array; an example of such a structure is give...

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PUM

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Abstract

A sensor mark (17) comprises a substrate (200) having: a first deep ultra violet (DUV) absorbing layer (310, 320, 330) comprising a first material which substantially absorbs DUV radiation; a first protecting layer (600) comprising a second material; wherein: the first DUV absorbing layer has a first through hole (500) in it; the first protecting layer is positioned, in plan, in the first throughhole (500) and the first protecting layer in the first through hole has a patterned region comprising a plurality of through holes (700); and the second material is more noble than the first material.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to EP application 17161058.7 filed on March 15, 2017, EP application 17176554.8 filed on June 19, 2017, and EP application 17183234.8 filed on July 26, 2017, the entire contents of which are incorporated by reference into this article. technical field [0003] The invention relates to a sensor mark for a sensor of a lithographic apparatus and a method of manufacturing a sensor mark. Background technique [0004] A lithographic apparatus is a machine configured to apply a desired pattern onto a substrate. For example, lithographic equipment may be used in the manufacture of integrated circuits (ICs). A lithographic apparatus can, for example, project a pattern (often also referred to as a "design layout" or "design") of a patterning device (e.g., a mask) onto a radiation-sensitive material (resist) disposed on a substrate (e.g., a wafer). agent) layer. [0005] In order to project a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G03F9/00G01J1/42
CPCG03F7/70341G03F7/7085G03F7/7095G03F9/7007G03F9/7076G01J1/4257G01J1/429
Inventor J·A·克鲁格基斯特V·Y·巴宁J·F·M·贝克斯M·贾姆布纳坦M·A·纳萨勒维克A·尼基佩洛维R·J·W·斯塔斯D·F·弗勒斯W·J·J·韦尔特斯S·赖克
Owner ASML NETHERLANDS BV