Seeding method and manufacturing method of czochralski silicon single crystal

Abstract

The invention discloses a seeding method of a Czochralski silicon single crystal. A seeding temperature is regulated by seeding speed deviation, and the seeding speed deviation is a difference value between an average seeding speed and a set seeding speed in a seeding temperature regulation period. If the seeding speed deviation is positive, positive fine adjustment is performed on the seeding temperature; and if the seeding speed deviation is negative, negative fine adjustment is performed on the seeding temperature. According to differences of the diameter shrinkage process, the seeding temperature regulation and control mode comprises the steps that only one continuous diameter shrinkage process is performed in the whole seeding process, regulation and control are conducted in the wholeprocess, and the fine adjustment amount of the seeding temperature is set according to a power regulation coefficient; or the seeding process is a non-continuous diameter shrinkage process and comprises a first diameter shrinkage process, an equal grain refinement process and a second diameter shrinkage process, a target diameter of diameter shrinkage is achieved through the second diameter shrinkage process, once seeding temperature regulation and control is carried out in the equal grain refinement process, and the fine adjustment amount of the seeding temperature is set according to the power regulation coefficient. The invention also discloses a production method of the czochralski silicon single crystal by adopting the seeding method. The temperature is accurately adjusted through seeding, and the yield of single crystals is increased.

Description

technical field

[0001] The invention belongs to the technical field of monocrystalline silicon manufacture, and in particular relates to a seeding method for a Czochralski silicon single crystal, and a method for manufacturing a Czochralski silicon single crystal by using the seeding method. Background technique

[0002] Photovoltaic power generation, as one of the main energy sources for green energy and sustainable development of human beings, has been increasingly valued and developed vigorously by countries all over the world. As one of the basic materials for photovoltaic power generation, monocrystalline silicon wafers have a wide market demand. A common single crystal silicon growth method is the Czochralski method, that is, in a single crystal furnace, the seed crystal is immersed in a melt contained in a crucible, and the seed crystal is pulled while rotating the seed crystal and the crucible, so that the The lower end of the crystal is sequentially seeded, shoulde...

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