Seeding method and manufacturing method of Czochralski silicon single crystal

Abstract

The invention discloses a crystal seeding method for Czochralski silicon single crystal. The seeding temperature is regulated by the seeding speed deviation, and the seeding speed deviation is the difference between the average seeding speed and the set seeding speed in the seeding temperature adjustment period. . If the seeding speed deviation is positive, the seeding temperature is fine-tuned positively; if the seeding speed deviation is negative, the seeding temperature is fine-tuned negatively. According to the difference in the diameter reduction process, the seeding temperature control methods include: the entire seeding process has only one continuous diameter reduction process, which is regulated throughout the process, and the seeding temperature fine-tuning amount is set according to the power adjustment coefficient; or the seeding process is a non-continuous process. The diameter reduction process includes the first diameter reduction process, the equal grain reduction process and the second diameter reduction process. After the second diameter reduction process, the target diameter of diameter reduction is achieved. During the equal grain reduction process, the seeding temperature is adjusted once. The amount of fine adjustment is set according to the power adjustment coefficient. The invention also discloses the production method of the Czochralski silicon single crystal adopting the above seeding method. The invention can accurately regulate the temperature of the seeded crystal, thereby improving the yield of single crystal.

Description

technical field [0001] The invention belongs to the technical field of monocrystalline silicon manufacture, and in particular relates to a seeding method for a Czochralski silicon single crystal, and a method for manufacturing a Czochralski silicon single crystal by using the seeding method. Background technique [0002] Photovoltaic power generation, as one of the main energy sources for green energy and sustainable development of human beings, has been increasingly valued and developed vigorously by countries all over the world. As one of the basic materials for photovoltaic power generation, monocrystalline silicon wafers have a wide market demand. A common single crystal silicon growth method is the Czochralski method, that is, in a single crystal furnace, the seed crystal is immersed in a melt contained in a crucible, and the seed crystal is pulled while rotating the seed crystal and the crucible, so that the The lower end of the crystal is sequentially seeded, shoulde...

AI Technical Summary

Problems solved by technology

This leads to uncertainty in the temperature adjustment process, lack of judgment standards, and it is difficult to ensure the stable production of single crystal silicon rods

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