39 results about "Cz silicon" patented technology

The invention provides a czochralski silicon single crystal growth process multivariable monitoring method, and belongs to the technical field of czochralski silicon single crystal growth. Comprising the following steps: synchronously acquiring and pre-processing various process variable time sequence data in a czochralski silicon single crystal growth process to obtain a multivariable time sequence matrix; performing slow feature extraction on the multivariable time sequence matrix by using a multi-scale sliding window strategy, and sequentially constructing a static slow feature matrix and a dynamic slow feature matrix; the static slow feature vector and the dynamic slow feature vector of each time step are spliced into a fusion slow feature vector, all the fusion slow feature vectors form a fusion slow feature matrix, and the fusion slow feature matrix is divided into a fusion training set and a fusion test set; and constructing an auto-encoder network model, and training and testing the auto-encoder network model to obtain a multivariable monitoring result. According to the invention, accurate real-time monitoring of the growth process of the czochralski silicon single crystal in a complex environment can be realized.

The invention discloses a PINN-based Czochralski silicon single crystal growth process V / G value soft measurement modeling method. The method is specifically implemented according to the following steps: step 1, constructing a physical model containing a crystal reference shape and a heat conduction model; the method comprises the steps of 1, designing a physical information neural network PINN, 2, designing a neural network model of the physical information neural network PINN, 3, designing a loss function of the PINN, performing training by combining the difference between network prediction and actual measurement values, a partial differential equation PDE and a physical constraint formed by boundary conditions, and optimizing the weight of the neural network model; step 4, network training and optimization; and step 5, model prediction. According to the invention, the problem that the V / G value is difficult to directly measure in the growth process of the czochralski silicon single crystal in the prior art is solved.

The invention discloses a Czochralski silicon single crystal growth process diameter detection system and method based on machine vision. The system comprises an optical data acquisition module, an image processing module, a core detection module and a control output module. The method comprises the following steps: firstly, acquiring a growth image of a crystal in a single crystal furnace through an obliquely mounted CCD (Charge Coupled Device) camera, and synchronously acquiring furnace temperature data and a nominal diameter of the crystal; searching an optimal solution of dynamic multi-region segmentation through a dynamic multi-threshold segmentation unit, extracting a highlight halo from a background, and reconstructing an edge detection model through a four-direction fractional order differential operator; an improved parallel chord center line theorem is adopted to obtain an ellipse center, and a two-stage optimization strategy is adopted to obtain an ellipse diameter; and finally, an effective detection result is output to a control system, and a data packet is uploaded in real time through the industrial Internet of Things gateway. The method is high in measurement precision, high in measurement efficiency and short in consumed time, online detection of the diameter of the 300mm-level crystal is realized, and core technical support is provided for closed-loop control of crystal growth.

The invention belongs to the technical field of semiconductor material detection, and particularly relates to a method for representing micro-defects of a near-perfect czochralski silicon wafer by regulating and controlling near-surface copper concentration. The invention discloses a method for representing micro-defects of a near-perfect czochralski silicon wafer by regulating and controlling the concentration of near-surface copper. The method specifically comprises the following steps: (S.1) cleaning the silicon wafer and immersing the silicon wafer into a copper nitrate solution for standing; (S.2) rinsing the silicon wafer with ionized water, taking out the silicon wafer and airing the silicon wafer; (S.3) performing high-temperature heat treatment on the silicon wafer for a period of time, and quickly cooling; (S.4) carrying out chemical polishing on the cooled silicon wafer; (S.5) horizontally placing the silicon wafer in the corrosive liquid; and (S.6) observing the surface of the silicon wafer by using an optical microscope or a scanning electron microscope so as to display the microdefects. According to the invention, copper precipitates at different depths are observed after copper is introduced at high temperature, so that the microdefect condition of the silicon wafer can be reflected. The method can clearly display the micro-defects in the nearly perfect czochralski silicon wafer, and has high detection efficiency and accuracy. The method is easy to operate, low in cost and suitable for silicon wafer microdefect detection in large-scale production.

The invention provides a method for reducing OSF of large-size Czochralski monocrystalline silicon, and relates to the technical field of large-size Czochralski monocrystalline silicon. In the crystal pulling process, the rotating speed of a crucible and the reduction amplitude of heating power are reduced in the later stage of shouldering, so that a set vacancy type point defect area is formed in advance, and the OSF of the large-size Czochralski monocrystalline silicon is reduced; increasing the rotating speed of the crucible and increasing the reduction amplitude of heating power in the equal-diameter earlier stage; in the later stage of shouldering, dynamic switching from'low crucible rotation + vacancy type 'to'high crucible rotation + low power' in the earlier stage of equal diameter is carried out, so that vacancy type point defects are driven to move towards a V / I boundary (namely the area where an OSF ring is located) or even from the gap type side, and a clean area without an OSF nucleus is formed in a crystal.

The invention discloses a silicon single crystal rod and a preparation method thereof, a silicon wafer and a solar cell, and belongs to the technical field of photovoltaic module preparation. The single crystal silicon rod contains an antimony element and a hydrogen element, the doping concentration of the antimony element in the single crystal silicon rod is Ca, the doping concentration of the hydrogen element in the single crystal silicon rod is Cb, and Ca / Cb is greater than or equal to 1E <-3 > and less than or equal to 4E + 2. According to the silicon single crystal rod provided by the invention, the antimony and the hydrogen are doped at the same time, and the effective segregation coefficient of the antimony in the crystalline silicon is improved through the interaction of the hydrogen and the antimony, so that the resistivity change uniformity of the silicon single crystal rod is improved, the oxygen content of the silicon single crystal rod is improved, the service life of the silicon single crystal rod is prolonged, and the resistivity is accurately controlled; the resistivity of the monocrystalline silicon rod and the derivative product thereof is more uniform and concentrated, and the performance and the production efficiency of the czochralski monocrystalline silicon and the battery can be effectively improved.

The application discloses a kind of direct pulling silicon single crystal phase transition surface heat flux solving method, first in the position of the observation window of silicon single crystal growth equipment installs temperature sensor, to measure and obtain the temperature of crystal surface measuring point, and establish silicon crystal two-dimensional axis symmetry heat conduction control equation and each boundary condition;Then the silicon crystal two-dimensional axis symmetry heat conduction control equation established is discretized, and iterative solution is solved using finite difference method, and the silicon crystal two-dimensional axis symmetry direct heat transfer model with boundary heat flux as input and measuring point temperature as output is obtained;Finally, an inverse heat transfer model capable of solving the phase transition surface heat flux is established, with the actual measured crystal surface temperature as input, and by continuously optimizing the heat flux information at the current time, the optimal estimation value of the heat flux at the current time is obtained as output. The application solves the problem that the phase transition surface heat flux cannot be directly measured and cannot be obtained in real time in the prior art.

The application provides a multi-variable monitoring method for a Czochralski silicon single crystal growth process, and belongs to the technical field of the Czochralski silicon single crystal growth process. The method comprises the following steps: synchronously collecting and preprocessing time series data of various process variables in the Czochralski silicon single crystal growth process to obtain a multi-variable time series matrix; a multi-scale sliding window strategy is used to extract slow features from the multi-variable time series matrix, and static slow feature matrices and dynamic slow feature matrices are sequentially constructed; a static slow feature vector and a dynamic slow feature vector at each time step are spliced into a fused slow feature vector, all fused slow feature vectors form a fused slow feature matrix, and the fused slow feature matrix is divided into a fused training set and a fused test set; an autoencoder network model is constructed, and the autoencoder network model is trained and tested to obtain a multi-variable monitoring result. The application can realize accurate real-time monitoring of the Czochralski silicon single crystal growth process in a complex environment.

The present invention is a nitride semiconductor wafer, including: a silicon single-crystal substrate; and a device layer composed of a nitride semiconductor above the silicon single-crystal substrate, wherein the silicon single-crystal substrate is a CZ silicon single-crystal substrate, and has a resistivity of 1000 Ω·cm or more, an oxygen concentration of 5.0×1016 atoms / cm3 (JEIDA) or more and 2.0×1.017 atoms / cm3 (JEIDA) or less, and a nitrogen concentration of 5.0×1014 atoms / cm3 or more. This provides a nitride semiconductor wafer that hardly causes plastic deformation even using a high-resistant low-oxygen silicon single-crystal substrate produced by the CZ method, which is suitably used for a high-frequency device, and that can reduce warpage of the substrate.

The present invention relates to the technical field of silicon single crystal preparation, and provides a quartz crucible for pulling silicon single crystals and a method for growing silicon single crystal ingots. On the inner cavity side surface of the quartz crucible, one or more first convex ridges protruding relative to the inner cavity side surface of the quartz crucible are arranged, and the first convex ridge pressing angle is 10° ≤ α1 ≤ 85°; the height of the first convex ridge is greater than the first boundary layer thickness of the liquid silicon on the inner cavity side surface of the quartz crucible, or on the inner cavity bottom surface of the quartz crucible, one or more second convex ridges protruding relative to the inner cavity bottom surface of the quartz crucible are provided, with a second convex ridge pressing angle α2, and the second convex ridge pressing angle α2 gradually decreases with the increase of the distance r from the z-axis, and the variation range is 2° < α2 < 78°, so as to suppress the liquid silicon flow and reduce the oxygen content. In the silicon single crystal preparation method, the equivalent angular velocity ω of the crucible rotation is used as an important adjustment parameter in the control method, which can simplify the process control process and more easily achieve the ideal control effect.

The invention provides a czochralski silicon single crystal growth method and device for cooperatively controlling volume microdefects and a silicon wafer. According to the method, a nitrogen-oxygen-vacancy ternary cooperative control strategy is implemented in the crystal pulling process, and the method specifically comprises the steps that the nitrogen doping amount is calculated in the charging stage, the rotating speed of a crucible and an airflow field are controlled in the melting and stabilizing stage to adjust the oxygen content, and a thermal field is shaped through an inverted-cone-shaped guide cylinder in the equal-diameter growth stage. And locking the V / G ratio of a silicon single crystal solid-liquid growth interface in a pure vacancy defect generation region by executing pulling speed locking logic. According to the invention, the nitrogen concentration in the crystal is limited in a low concentration range of 1 * 10 < 13 > to 5 * 10 < 13 > atoms / cm < 3 >, the oxygen concentration is controlled in a range of 11 to 13 ppma, and the high-concentration vacancy of the pure vacancy region is utilized to compensate the insufficient nucleation power under the low-nitrogen condition, so that the nitrogen-related defects are inhibited, the volume micro-defects with high density and uniformly distributed in the radial direction are obtained, and the high-purity nitrogen-containing crystal is obtained. And the gate oxide integrity of the silicon wafer is improved.

This application proposes a method for analyzing the oscillation of silicon crystals in a Czochralski (CZ) single-crystal pulling system under eccentric excitation, belonging to the field of semiconductor silicon single-crystal preparation technology. The method includes the following steps: constructing a silicon crystal oscillation model for the CZ single-crystal pulling system under eccentric excitation; performing energy analysis on the CZ single-crystal pulling system and applying the second-type Lagrange equation to establish the nonlinear equations for the CZ single-crystal pulling system under eccentric excitation; solving the nonlinear equations using the Runge-Kutta method to obtain the oscillation angles of the flexible shaft and the pulled silicon crystal; and analyzing the changes in the oscillation angles of the flexible shaft and the pulled silicon crystal under different eccentricities. This application can accurately obtain the oscillation of the flexible shaft and the pulled silicon crystal in the CZ single-crystal pulling system under eccentric excitation.

A solar cell includes a light-receiving surface electrode formed on a light-receiving surface, a back surface electrode formed on a backside, and a CZ silicon single crystal substrate doped with gallium. The CZ silicon single crystal substrate contains 12 ppm or more oxygen atoms. A spiral oxygen-induced defect is not observed in an EL (electroluminescence) image of the solar cell.

The present application relates to a kind of single crystal silicon polishing piece COP and automatic identification method of processing defect, belongs to the technical field of pulling silicon single crystal, comprising the following operating steps: first step: divide silicon wafer into 12 fan-shaped regions with angle of 30°.Second step: divide silicon wafer into three annular regions with radius of zone1 diameter of 0-50mm, zone2 diameter of 50mm-100mm, zone3 diameter of 100mm-150mm respectively.Third step: define the coordinate limit of each zone according to the division mode of first step and second step.Fourth step: according to the coordinate file of particle detection, all Defect is attributed to each region.Fifth step: count the number of Defect in each region.Sixth step: after removing the maximum value and minimum value of the number of Defect in each region, the mean and standard deviation of Zone1, Zone2 and Zone3 are calculated respectively.Seventh step: the standard for judging a certain Zone as COP mode is standard deviation / mean<0.20, otherwise it is processing defect.Solve the problem of failure mode recognition difficulty and improper product disposal in actual production.

In an example, a method of manufacturing a semiconductor device includes providing a semiconductor substrate comprising an unpolished CZ silicon substrate, a substrate upper side, and a substrate lower side opposite to the substrate upper side. The method includes first annealing the semiconductor substrate at a first temperature in an inert environment for a first time. The method includes second annealing the semiconductor substrate at a second temperature in a wet oxidation environment for a second time. The first annealing dissolves inner wall oxide in bulk region voids and the second annealing fills the voids with semiconductor interstitials. In some examples, the CZ silicon substrate is provided from a CZ ingot grown in the presence of a magnetic field and using continuous counter-doping. The method provides, among other things, a CZ silicon substrate with reduced crystal originated particle (COP) defects, reduced oxygen concentration, and reduced radial resistivity variation.

The utility model provides a cutting device of a czochralski silicon guillotine shear. The cutting device comprises a driving wheel; the first wire guide wheel is arranged on one side of the driving wheel; the second wire guide wheel is arranged above the driving wheel; the third wire guide wheel is arranged above the second wire guide wheel; the tension wheel is arranged above the first wire guide wheel, and the height of the tension wheel can be adjusted; the diamond cutting wire is sequentially wound on the driving wheel, the second wire guide wheel / the third wire guide wheel, the tension wheel, the first wire guide wheel and the driving wheel to form a ring shape, and a crystal bar is cut off through the diamond cutting wire between the driving wheel and the first wire guide wheel. According to the cutting device of the czochralski silicon guillotine shear disclosed by the embodiment of the utility model, the use of diamond cutting lines with different lengths can be met, and the utilization rate of the diamond cutting lines is improved.

This invention discloses a centralized intelligent control system for a Czochralski silicon single crystal furnace, specifically relating to the field of single crystal silicon production technology. The system includes a main unit equipped with a combing mechanism, which includes a material guide frame positioned on the top side of the main unit and a supporting mounting box. This invention enables integrated material feeding by transferring materials one by one to a first reinforcing frame. Simultaneously, a counter counts the material flow during transport, automatically allocating appropriate workloads based on worker skill levels. This reduces labor intensity and prevents vicious cycles that could negatively impact regional production capacity. The system also allows for diverse material diversion during operation, offering both convenience and practicality.

The invention provides a Czochralski silicon single crystal furnace lifting lead screw fault diagnosis method based on multi-source signals, and belongs to the technical field of Czochralski silicon single crystal furnace fault diagnosis. Comprising the following steps: collecting vibration information and displacement information of a lifting lead screw of the czochralski silicon single crystal furnace; performing information division and normalization processing on all the collected information in sequence to obtain a plurality of vibration normalization data sets and a plurality of displacement normalization data sets; constructing fused data information by using all the normalized data sets; performing coarse graining reconstruction, time sequence reconstruction, permutation entropy calculation and normalization operation on the fusion data information in sequence to obtain a fusion entropy corresponding to each scale factor; extracting a fusion entropy feature set from all fusion entropies, and training and verifying the support vector machine model to obtain a fault diagnosis model; and performing fault diagnosis on the lifting lead screw of the czochralski silicon single crystal furnace by using the fault diagnosis model. According to the invention, the fault diagnosis precision and efficiency can be improved.

Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.

The present application proposes a method for diagnosing faults in the lifting lead screw of a Czochralski silicon single crystal furnace based on multi-source signals, belonging to the technical field of fault diagnosis of Czochralski silicon single crystal furnaces. It includes: collecting vibration information and displacement information of the lifting lead screw of the Czochralski silicon single crystal furnace; respectively performing information division and normalization processing on all the collected information to obtain multiple vibration normalization data sets and multiple displacement normalization data sets; constructing fused data information using all the normalization data sets; successively performing coarse-grained reconstruction, time series reconstruction, permutation entropy value calculation, and normalization operations on the fused data information to obtain the fused entropy value corresponding to each scale factor; extracting a fused entropy value feature set from all the fused entropy values, training and validating a support vector machine model to obtain a fault diagnosis model; and using the fault diagnosis model to diagnose faults in the lifting lead screw of the Czochralski silicon single crystal furnace. The present application can improve the accuracy and efficiency of fault diagnosis.

The application provides a temperature prediction method for a silicon melt in a Czochralski silicon single crystal growth process, and belongs to the technical field of semiconductor silicon single crystal preparation. The method comprises the following steps: uniformly collecting temperature data of the silicon melt at all times during the Czochralski silicon single crystal growth process, constructing a silicon melt temperature matrix, and obtaining a first snapshot matrix and a second snapshot matrix with a time offset relationship; performing singular value decomposition on the first snapshot matrix, and determining a truncated rank to obtain a singular value decomposition result of the first snapshot matrix after the first snapshot matrix is truncated to the truncated rank; obtaining an approximate relationship of the first snapshot matrix and the second snapshot matrix, and projecting a high-dimensional matrix in the approximate relationship to obtain a low-rank matrix; performing eigenvalue decomposition on the low-rank matrix to construct a high-dimensional dynamic mode matrix; constructing a temperature prediction model; and performing adaptive temperature prediction on the silicon melt by using the temperature prediction model. The application can effectively improve the temperature prediction efficiency of the silicon melt and ensure the temperature prediction accuracy.

This invention relates to the field of single-crystal silicon preparation technology, specifically disclosing a method for preparing Czochralski silicon single crystals. The method provided by this invention solves the problem of high oxygen content caused by crucible oxygen release through the physical barrier of the solidified layer formed by zone solidification. It also achieves the preparation of large-size single-crystal silicon with extremely low oxygen content by using the zero-magnetic-force surface of the CUSP magnetic field to facilitate oxygen volatilization and suppressing oxygen atom migration to the growth interface through a strong edge magnetic field. This solves the problem of the difficulty in stably mass-producing large-size, low-oxygen-content single-crystal silicon using the zone melting method in existing technologies. Furthermore, the Czochralski silicon single crystal preparation method provided by this invention is simple and controllable to operate, requires no special or complex equipment, and is suitable for large-scale production.

The present invention is a device for manufacturing a silicon single crystal by the CZ method, the device comprising: a chamber in which a quartz crucible and a heater for heating and melting a silicon polycrystalline raw material in the quartz crucible to obtain a raw material melt are disposed; a gas introduction pipe; and a gas exhaust pipe. The gas exhaust pipe has a plurality of pipes each having a joint part, and a pipe clamp that can be liquid-cooled by cooling water passing therethrough. The joint parts of the plurality of pipes face each other with a sealing material interposed therebetween, and the plurality of pipes are connected to each other by the facing joint parts being sandwiched by the pipe clamp. The sealing material between the joint parts can be cooled by the liquid cooling of the pipe clamp. As a result, a CZ silicon single crystal manufacturing device is provided in which the gas exhaust pipe is easy to handle and the deterioration of the sealing material between the pipes can be prevented.

The invention relates to a Czochralski silicon single crystal device, a first crucible, a Czochralski silicon single crystal and a drawing method, the device is characterized in that a second heater is additionally arranged at the lower part of the bottom surface of the first crucible, the maximum transverse diameter of the heating part on an x-y plane is less than 80% of the maximum inner diameter of the part of the first crucible for containing molten silicon, or the peripheral contour area is less than 64% of the maximum area of the section of the part; according to the device, a second heat insulation and heat reflector is arranged between the first heater and the second heater or close to the periphery of the side wall of the first crucible, and the diffuse reflection rate of an inner layer reflecting surface to 1-5 [mu] m heat radiation reaches 50-99%. The waist temperature of the side wall of the first crucible is reduced, softening collapse is prevented, the service life is prolonged, and the charging amount is increased; meanwhile, the molten silicon convection direction is optimized, oxygen impurity fusion is reduced, and the crystal quality is improved; and efficient heat reflection is utilized to improve heat efficiency, reduce heat convection, enhance heat conduction and improve overall energy efficiency and process stability.

The present application proposes a method for monitoring the wear of a ball screw in a crucible lifting mechanism of a vertical silicon single crystal furnace, and belongs to the technical field of fault diagnosis of silicon single crystal equipment. The method includes the following steps: installing a wire encoder and a programmable logic controller on the crucible lifting mechanism; using the wire encoder and the programmable logic controller to draw a first relationship curve between the ideal number of rotations and the ideal displacement, and a second relationship curve between the actual number of rotations and the actual displacement on the display and control end; setting a first wear threshold and a second wear threshold according to the first relationship curve, comparing the second relationship curve with the first wear threshold and the second wear threshold, and updating the comparison result in real time, thereby realizing real-time monitoring of the wear of the ball screw. The present application can solve the problem of the risk of failure in the crucible lifting mechanism due to untimely monitoring of the wear of the ball screw.

The present application relates to a kind of straight pull silicon single crystal device and first crucible, straight pull silicon single crystal and drawing method, the second heater is additionally provided in the lower part of the bottom surface of first crucible, and the heating part is less than 80% of the maximum inner diameter of the part of first crucible containing molten silicon in the maximum transverse diameter of x-y plane, or the outer peripheral contour area is less than 64% of the maximum area of the section;The device is also provided with second heat insulation and heat reflector between first heater and second heater or close to the outer periphery of the side wall of first crucible, and the diffuse reflectivity of the inner layer reflecting surface to 1 μm~5 μm thermal radiation reaches 50%~99%.Further reduce the temperature of the waist of first crucible side wall, prevent softening collapse, prolong service life, improve the loading capacity;While optimizing the direction of molten silicon convection, reduce the oxygen impurities into, improve the crystal quality;And utilize high-efficiency heat reflection to improve thermal efficiency, reduce heat convection, enhance heat conduction, improve overall energy efficiency and process stability.

A solar cell includes a light-receiving surface electrode formed on a light-receiving surface, a back surface electrode formed on a backside, and a CZ silicon single crystal substrate doped with gallium. The CZ silicon single crystal substrate contains 12 ppm or more oxygen atoms. A spiral oxygen-induced defect is not observed in an EL (electroluminescence) image of the solar cell.

To provide an apparatus for manufacturing a CZ silicon single crystal, capable of easily arranging a gas exhaust pipeline and preventing a seal material between pipes from deteriorating.SOLUTION: An apparatus for manufactures a silicon single crystal by the CZ method includes: a chamber arranging inside a quartz crucible and a heater for heating and melting a silicon polycrystal raw material in the quartz crucible to form a raw material melt; a gas introduction pipeline; and a gas exhaust pipeline. The gas exhaust pipeline includes a plurality of pipes having respective joint parts and pipe clamps allowing liquid cooling by passing cooling water; the joint parts of the plurality of pipes face each other so as to sandwich the seal material; the plurality of pipes are connected by sandwiching the facing joint parts by the pipe clamps; and the liquid cooling of the pipe clamp can cool the seal material between the joint parts.SELECTED DRAWING: Figure 1

The application discloses a method for predicting the flow velocity of a silicon melt in a Czochralski silicon single crystal growth process, which comprises the following steps: firstly, a two-dimensional axisymmetric rotation model of the silicon melt in the Czochralski silicon single crystal growth process is established, and the boundary conditions of the fluid model are set; then, a space factor physical information neural network is constructed; finally, the two-dimensional axisymmetric rotation model of the silicon melt in the Czochralski silicon single crystal growth process is solved by using the space factor physical information neural network, and finally the prediction result of the flow velocity of the silicon melt is obtained. The application solves the problem that the flow velocity of the silicon melt in the Czochralski silicon single crystal growth process cannot be predicted in real time in the prior art.

The present invention is an apparatus for producing a silicon single crystal, the apparatus comprising: a chamber in which a quartz crucible and a heater for heating and melting a silicon polycrystalline raw material in the quartz crucible are disposed to produce a raw material melt; a gas introduction pipe; the silicon single crystal manufacturing apparatus is an apparatus for manufacturing a silicon single crystal by a CZ method, and the gas discharge pipe has a plurality of pipes each having a joint portion and a pipe clip capable of liquid cooling by circulating cooling water, the joint portions of the plurality of pipes face each other by sandwiching a sealing material therebetween, and the gas discharge pipe is disposed between the joint portions of the plurality of pipes and the pipe clip. The plurality of pipes are connected to each other by clamping the facing joint parts with each other by the pipe clamp, and the sealing material between the joint parts can be cooled by liquid cooling of the pipe clamp. As a result, provided is a CZ silicon single crystal manufacturing apparatus in which the gas discharge piping is easy to handle and the deterioration of the sealing material between the piping can be prevented.