19 results about "Cz silicon" patented technology

The invention provides a method for reducing OSF of large-size Czochralski monocrystalline silicon, and relates to the technical field of large-size Czochralski monocrystalline silicon. In the crystal pulling process, the rotating speed of a crucible and the reduction amplitude of heating power are reduced in the later stage of shouldering, so that a set vacancy type point defect area is formed in advance, and the OSF of the large-size Czochralski monocrystalline silicon is reduced; increasing the rotating speed of the crucible and increasing the reduction amplitude of heating power in the equal-diameter earlier stage; in the later stage of shouldering, dynamic switching from'low crucible rotation + vacancy type 'to'high crucible rotation + low power' in the earlier stage of equal diameter is carried out, so that vacancy type point defects are driven to move towards a V / I boundary (namely the area where an OSF ring is located) or even from the gap type side, and a clean area without an OSF nucleus is formed in a crystal.

The invention discloses a silicon single crystal rod and a preparation method thereof, a silicon wafer and a solar cell, and belongs to the technical field of photovoltaic module preparation. The single crystal silicon rod contains an antimony element and a hydrogen element, the doping concentration of the antimony element in the single crystal silicon rod is Ca, the doping concentration of the hydrogen element in the single crystal silicon rod is Cb, and Ca / Cb is greater than or equal to 1E <-3 > and less than or equal to 4E + 2. According to the silicon single crystal rod provided by the invention, the antimony and the hydrogen are doped at the same time, and the effective segregation coefficient of the antimony in the crystalline silicon is improved through the interaction of the hydrogen and the antimony, so that the resistivity change uniformity of the silicon single crystal rod is improved, the oxygen content of the silicon single crystal rod is improved, the service life of the silicon single crystal rod is prolonged, and the resistivity is accurately controlled; the resistivity of the monocrystalline silicon rod and the derivative product thereof is more uniform and concentrated, and the performance and the production efficiency of the czochralski monocrystalline silicon and the battery can be effectively improved.

The application discloses a kind of direct pulling silicon single crystal phase transition surface heat flux solving method, first in the position of the observation window of silicon single crystal growth equipment installs temperature sensor, to measure and obtain the temperature of crystal surface measuring point, and establish silicon crystal two-dimensional axis symmetry heat conduction control equation and each boundary condition;Then the silicon crystal two-dimensional axis symmetry heat conduction control equation established is discretized, and iterative solution is solved using finite difference method, and the silicon crystal two-dimensional axis symmetry direct heat transfer model with boundary heat flux as input and measuring point temperature as output is obtained;Finally, an inverse heat transfer model capable of solving the phase transition surface heat flux is established, with the actual measured crystal surface temperature as input, and by continuously optimizing the heat flux information at the current time, the optimal estimation value of the heat flux at the current time is obtained as output. The application solves the problem that the phase transition surface heat flux cannot be directly measured and cannot be obtained in real time in the prior art.

The application provides a multi-variable monitoring method for a Czochralski silicon single crystal growth process, and belongs to the technical field of the Czochralski silicon single crystal growth process. The method comprises the following steps: synchronously collecting and preprocessing time series data of various process variables in the Czochralski silicon single crystal growth process to obtain a multi-variable time series matrix; a multi-scale sliding window strategy is used to extract slow features from the multi-variable time series matrix, and static slow feature matrices and dynamic slow feature matrices are sequentially constructed; a static slow feature vector and a dynamic slow feature vector at each time step are spliced into a fused slow feature vector, all fused slow feature vectors form a fused slow feature matrix, and the fused slow feature matrix is divided into a fused training set and a fused test set; an autoencoder network model is constructed, and the autoencoder network model is trained and tested to obtain a multi-variable monitoring result. The application can realize accurate real-time monitoring of the Czochralski silicon single crystal growth process in a complex environment.

The present invention is a nitride semiconductor wafer, including: a silicon single-crystal substrate; and a device layer composed of a nitride semiconductor above the silicon single-crystal substrate, wherein the silicon single-crystal substrate is a CZ silicon single-crystal substrate, and has a resistivity of 1000 Ω·cm or more, an oxygen concentration of 5.0×1016 atoms / cm3 (JEIDA) or more and 2.0×1.017 atoms / cm3 (JEIDA) or less, and a nitrogen concentration of 5.0×1014 atoms / cm3 or more. This provides a nitride semiconductor wafer that hardly causes plastic deformation even using a high-resistant low-oxygen silicon single-crystal substrate produced by the CZ method, which is suitably used for a high-frequency device, and that can reduce warpage of the substrate.

The invention provides a czochralski silicon single crystal growth method and device for cooperatively controlling volume microdefects and a silicon wafer. According to the method, a nitrogen-oxygen-vacancy ternary cooperative control strategy is implemented in the crystal pulling process, and the method specifically comprises the steps that the nitrogen doping amount is calculated in the charging stage, the rotating speed of a crucible and an airflow field are controlled in the melting and stabilizing stage to adjust the oxygen content, and a thermal field is shaped through an inverted-cone-shaped guide cylinder in the equal-diameter growth stage. And locking the V / G ratio of a silicon single crystal solid-liquid growth interface in a pure vacancy defect generation region by executing pulling speed locking logic. According to the invention, the nitrogen concentration in the crystal is limited in a low concentration range of 1 * 10 < 13 > to 5 * 10 < 13 > atoms / cm < 3 >, the oxygen concentration is controlled in a range of 11 to 13 ppma, and the high-concentration vacancy of the pure vacancy region is utilized to compensate the insufficient nucleation power under the low-nitrogen condition, so that the nitrogen-related defects are inhibited, the volume micro-defects with high density and uniformly distributed in the radial direction are obtained, and the high-purity nitrogen-containing crystal is obtained. And the gate oxide integrity of the silicon wafer is improved.

This application proposes a method for analyzing the oscillation of silicon crystals in a Czochralski (CZ) single-crystal pulling system under eccentric excitation, belonging to the field of semiconductor silicon single-crystal preparation technology. The method includes the following steps: constructing a silicon crystal oscillation model for the CZ single-crystal pulling system under eccentric excitation; performing energy analysis on the CZ single-crystal pulling system and applying the second-type Lagrange equation to establish the nonlinear equations for the CZ single-crystal pulling system under eccentric excitation; solving the nonlinear equations using the Runge-Kutta method to obtain the oscillation angles of the flexible shaft and the pulled silicon crystal; and analyzing the changes in the oscillation angles of the flexible shaft and the pulled silicon crystal under different eccentricities. This application can accurately obtain the oscillation of the flexible shaft and the pulled silicon crystal in the CZ single-crystal pulling system under eccentric excitation.

The present application relates to a kind of single crystal silicon polishing piece COP and automatic identification method of processing defect, belongs to the technical field of pulling silicon single crystal, comprising the following operating steps: first step: divide silicon wafer into 12 fan-shaped regions with angle of 30°.Second step: divide silicon wafer into three annular regions with radius of zone1 diameter of 0-50mm, zone2 diameter of 50mm-100mm, zone3 diameter of 100mm-150mm respectively.Third step: define the coordinate limit of each zone according to the division mode of first step and second step.Fourth step: according to the coordinate file of particle detection, all Defect is attributed to each region.Fifth step: count the number of Defect in each region.Sixth step: after removing the maximum value and minimum value of the number of Defect in each region, the mean and standard deviation of Zone1, Zone2 and Zone3 are calculated respectively.Seventh step: the standard for judging a certain Zone as COP mode is standard deviation / mean<0.20, otherwise it is processing defect.Solve the problem of failure mode recognition difficulty and improper product disposal in actual production.

In an example, a method of manufacturing a semiconductor device includes providing a semiconductor substrate comprising an unpolished CZ silicon substrate, a substrate upper side, and a substrate lower side opposite to the substrate upper side. The method includes first annealing the semiconductor substrate at a first temperature in an inert environment for a first time. The method includes second annealing the semiconductor substrate at a second temperature in a wet oxidation environment for a second time. The first annealing dissolves inner wall oxide in bulk region voids and the second annealing fills the voids with semiconductor interstitials. In some examples, the CZ silicon substrate is provided from a CZ ingot grown in the presence of a magnetic field and using continuous counter-doping. The method provides, among other things, a CZ silicon substrate with reduced crystal originated particle (COP) defects, reduced oxygen concentration, and reduced radial resistivity variation.

This invention relates to the field of single-crystal silicon preparation technology, specifically disclosing a method for preparing Czochralski silicon single crystals. The method provided by this invention solves the problem of high oxygen content caused by crucible oxygen release through the physical barrier of the solidified layer formed by zone solidification. It also achieves the preparation of large-size single-crystal silicon with extremely low oxygen content by using the zero-magnetic-force surface of the CUSP magnetic field to facilitate oxygen volatilization and suppressing oxygen atom migration to the growth interface through a strong edge magnetic field. This solves the problem of the difficulty in stably mass-producing large-size, low-oxygen-content single-crystal silicon using the zone melting method in existing technologies. Furthermore, the Czochralski silicon single crystal preparation method provided by this invention is simple and controllable to operate, requires no special or complex equipment, and is suitable for large-scale production.

The invention relates to a Czochralski silicon single crystal device, a first crucible, a Czochralski silicon single crystal and a drawing method, the device is characterized in that a second heater is additionally arranged at the lower part of the bottom surface of the first crucible, the maximum transverse diameter of the heating part on an x-y plane is less than 80% of the maximum inner diameter of the part of the first crucible for containing molten silicon, or the peripheral contour area is less than 64% of the maximum area of the section of the part; according to the device, a second heat insulation and heat reflector is arranged between the first heater and the second heater or close to the periphery of the side wall of the first crucible, and the diffuse reflection rate of an inner layer reflecting surface to 1-5 [mu] m heat radiation reaches 50-99%. The waist temperature of the side wall of the first crucible is reduced, softening collapse is prevented, the service life is prolonged, and the charging amount is increased; meanwhile, the molten silicon convection direction is optimized, oxygen impurity fusion is reduced, and the crystal quality is improved; and efficient heat reflection is utilized to improve heat efficiency, reduce heat convection, enhance heat conduction and improve overall energy efficiency and process stability.

The present application relates to a kind of straight pull silicon single crystal device and first crucible, straight pull silicon single crystal and drawing method, the second heater is additionally provided in the lower part of the bottom surface of first crucible, and the heating part is less than 80% of the maximum inner diameter of the part of first crucible containing molten silicon in the maximum transverse diameter of x-y plane, or the outer peripheral contour area is less than 64% of the maximum area of the section;The device is also provided with second heat insulation and heat reflector between first heater and second heater or close to the outer periphery of the side wall of first crucible, and the diffuse reflectivity of the inner layer reflecting surface to 1 μm~5 μm thermal radiation reaches 50%~99%.Further reduce the temperature of the waist of first crucible side wall, prevent softening collapse, prolong service life, improve the loading capacity;While optimizing the direction of molten silicon convection, reduce the oxygen impurities into, improve the crystal quality;And utilize high-efficiency heat reflection to improve thermal efficiency, reduce heat convection, enhance heat conduction, improve overall energy efficiency and process stability.

The application discloses a method for predicting the flow velocity of a silicon melt in a Czochralski silicon single crystal growth process, which comprises the following steps: firstly, a two-dimensional axisymmetric rotation model of the silicon melt in the Czochralski silicon single crystal growth process is established, and the boundary conditions of the fluid model are set; then, a space factor physical information neural network is constructed; finally, the two-dimensional axisymmetric rotation model of the silicon melt in the Czochralski silicon single crystal growth process is solved by using the space factor physical information neural network, and finally the prediction result of the flow velocity of the silicon melt is obtained. The application solves the problem that the flow velocity of the silicon melt in the Czochralski silicon single crystal growth process cannot be predicted in real time in the prior art.

The present invention is an apparatus for producing a silicon single crystal, the apparatus comprising: a chamber in which a quartz crucible and a heater for heating and melting a silicon polycrystalline raw material in the quartz crucible are disposed to produce a raw material melt; a gas introduction pipe; the silicon single crystal manufacturing apparatus is an apparatus for manufacturing a silicon single crystal by a CZ method, and the gas discharge pipe has a plurality of pipes each having a joint portion and a pipe clip capable of liquid cooling by circulating cooling water, the joint portions of the plurality of pipes face each other by sandwiching a sealing material therebetween, and the gas discharge pipe is disposed between the joint portions of the plurality of pipes and the pipe clip. The plurality of pipes are connected to each other by clamping the facing joint parts with each other by the pipe clamp, and the sealing material between the joint parts can be cooled by liquid cooling of the pipe clamp. As a result, provided is a CZ silicon single crystal manufacturing apparatus in which the gas discharge piping is easy to handle and the deterioration of the sealing material between the piping can be prevented.

This invention discloses an infrared image analysis system for Czochralski silicon single crystal seed crystals, relating to the field of crystal growth process monitoring technology. The system includes an infrared image acquisition unit, an image enhancement module, a feature segmentation module, a graph construction and analysis module, and a quality assessment module. The infrared image acquisition unit acquires the original infrared image sequence; the image enhancement module uses a dual-stream Transformer network guided by illumination-independent features to suppress illumination interference and enhance structural features; the feature segmentation module achieves three-dimensional instance segmentation based on an improved Segment-Anything Model combined with multi-view fusion; the graph construction and analysis module maps instances to graph nodes, constructs an undirected sparse graph, and extracts topological geometric features; the quality assessment module determines the seed crystal state based on the feature vectors. This invention solves the problems of low infrared image contrast and difficult segmentation, achieving automated and high-precision quantitative assessment of the seed crystal fusion state.

The invention provides a silicon crystal swing analysis method in a Czochralski silicon single crystal pulling system under eccentric excitation, and belongs to the technical field of semiconductor silicon single crystal preparation. The method comprises the following steps: constructing a silicon crystal swing model of a czochralski silicon single crystal pulling system under eccentric excitation; performing energy analysis on the Czochralski silicon single crystal pulling system, and establishing a nonlinear equation of the Czochralski silicon single crystal pulling system under eccentric excitation by applying a second type of Lagrange equation; solving the nonlinear equation by adopting a Runge-Kutta method to obtain a swinging angle of the flexible shaft and the pulled-out silicon crystal; and the change conditions of the swinging angles of the flexible shaft and the pulled-out silicon crystal under different eccentric distances are analyzed. According to the invention, the swinging conditions of the flexible shaft and the pulled silicon crystal of the Czochralski silicon single crystal pulling system under eccentric excitation can be accurately obtained.

The invention discloses a Czochralski silicon single crystal crucible and a crystal pulling method, and relates to the technical field of monocrystalline silicon manufacturing, the Czochralski silicon single crystal crucible comprises a crucible body, and the crucible body is made of tungsten. The crystal pulling method of the Czochralski silicon single crystal crucible comprises the following steps: placing the crucible on a thermal field crucible support of a single crystal furnace, and putting a material into the crucible; and setting the crucible rotation speed to be 7-9 revolutions and the furnace pressure to be 11-13 torrs, and carrying out crystal pulling treatment. The crucible body is made of tungsten instead of traditional quartz, oxygen-free crystal pulling is achieved, a crystal pulling process window can be opened, then the per unit area yield is improved, and it is guaranteed that a silicon rod is free of oxygen. Meanwhile, the tungsten crucible is longer in operation time, the limit that the operation time of a traditional quartz crucible is smaller than 600 hours is broken through, 1000-hour operation and repeated use can be achieved, and the crystal pulling non-silicon cost can be greatly reduced.

The application relates to a method for manufacturing a high-voltage VDMOS by adopting a silicon-silicon bonding process, which comprises the following steps: preparing a support substrate and a bonding substrate; carrying out silicon-silicon bonding on the support substrate and the bonding substrate, and carrying out high-temperature annealing solidification; carrying out etching treatment on the edge chamfering of the support substrate and the bonding substrate after bonding; thinning the bonding substrate to a required thickness; and polishing the bonding substrate. The method for manufacturing a high-voltage VDMOS by adopting the silicon-silicon bonding process of the application uses the silicon-silicon bonding technology, uses conventional CZ silicon substrate materials with different resistivities to bond with each other to prepare a silicon-silicon bonded wafer, replaces a current thick-film epitaxial wafer, obtains a high-quality silicon substrate wafer satisfying customer requirements, improves production efficiency and reduces production cost, and the transition region of the obtained high-voltage VDMOS device is obviously narrowed, and the consistency of product parameters is better.

A high-resistivity trap-diffused low-voltage diode and its fabrication method are disclosed. This invention relates to semiconductor devices. The invention involves selective diffusion on a high-resistivity CZ silicon substrate to fabricate a low-resistivity P+ substrate. Deoxidation treatment is performed on both the high-resistivity substrate and the highly doped low-resistivity P+ substrate to reduce the oxygen content of the device substrate and lower the product's IR. High oxygen content in the substrate easily leads to more load centers, resulting in more defects during production and causing high reverse leakage current. Therefore, the oxygen content should be less than 1 x 10⁻⁶. 17 pcs / cm 3 At the same time, by combining the trap technology, the breakdown point of the diode junction under high current is changed from the edge to the central region, thereby improving the overall withstand voltage capability and reliability of the product.