32results about How to "Good substrate" patented technology

An interbody spinal implant is formed of cortical bone adapted for placement across an intervertebral space formed across the height of a disc space between two adjacent vertebral bodies. An asymmetrical leading end on the implant is adapted to sit upon the peripheral areas, such as the apophyseal rim and the apophyseal rim area, of the vertebral end plate region of the vertebral bodies without protruding therefrom. The asymmetrical leading end allows for the safe use of an implant of maximum length for the implantation space into which it is installed. The implant can also include an asymmetric trailing end adapted to sit upon the more peripheral areas of the vertebral end plate region of the vertebral bodies.

A semiconductor-on-insulator structure and a method of forming the silicon-on-insulator structure including an integrated graphene layer are disclosed. In an embodiment, the method comprises processing a silicon material to form a buried oxide layer within the silicon material, a silicon substrate below the buried oxide, and a silicon-on-insulator layer on the buried oxide. A graphene layer is transferred onto the silicon-on-insulator layer. Source and drain regions are formed in the silicon-on-insulator layer, and a gate is formed above the graphene. In one embodiment, the processing includes growing a respective oxide layer on each of first and second silicon sections, and joining these silicon sections together via the oxide layers to form the silicon material. The processing, in an embodiment, further includes removing a portion of the first silicon section, leaving a residual silicon layer on the bonded oxide, and the graphene layer is positioned on this residual silicon layer.

The invention includes compositions containing one or more alpha -sulfofatty acid esters, and methods for making and using the same. At least one alpha -sulfofatty acid ester is included in an inner portion. The invented composition can further include an outer portion which protects the alpha -sulfofatty acid ester from di-salt formation. The resulting composition improves the stability of the alpha -sulfofatty acid ester after manufacture, during shipping and storage, and in detergents. The invention further included detergents containing the invented composition, and methods of making such detergents.

The method for producing a group III nitride semiconductor crystal of the invention comprises a step of preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing step includes growing the group III nitride semiconductor so as to extend in the +C-axis direction of the seed crystal. A group III-V nitride semiconductor crystal having high quality and a large-area non-polar plane can be obtained by the method.

A polymer comprising recurring units of formula (1) and recurring units of formulae (2a) to (2d) wherein R¹ is F or fluoroalkyl, R² is a single bond or an alkylene or fluoroalkylene, R³ and R⁴ are H, F, alkyl or fluoroalkyl, at least one of R³ and R⁴ contains F, R⁵ is H or an acid labile group, R⁶ is an acid labile group, adhesive group, alkyl or fluoroalkyl, and “a” is 1 or 2 is used as a base resin to formulate a resist composition which has advantages including high transparency to radiation having a wavelength of up to 200 nm, substrate adhesion, developer affinity and dry etching resistance.

It is an object of the present invention to provide a liquid composition for cleaning a semiconductor substrate capable of removing metal impurities on the substrate surface without corroding a copper wiring in the manufacturing process of a semiconductor circuit element.

According to the present invention, by means of a cleaning liquid composition for cleaning a semiconductor substrate, comprising one or more aliphatic polycarboxylic acids and one or more basic amino acids, metal impurities can be removed without corroding the copper wiring in a cleaning process of a semiconductor substrate having a copper wiring, in particular in a cleaning process of a semiconductor substrate in which the copper wiring is exposed after chemical mechanical polishing (CMP).

The invention provides novel heat-resistant steel for a key hot end part of an ultrahigh-parameter steam turbine. The novel heat-resistant steel is prepared from the components in percentage by weight: 0.02-0.08% of C, 8.00-10.00% of Cr, 2.0-4.0% of Co, 2.0-4.0% of W, 0.10-0.80% of Mo, 0.10-0.30% of V, 0.30-0.70% of Ni, 0.05-0.15% of Nb, 0.010-0.050% of N, 0.010-0.030% of B, 0.1-1.0% of rare earthelements, no more than 0.10% of Si, 0.10-1.00% of Mn, and the balance of Fe and inevitable impurities. The novel heat-resistant steel belongs to martensitic heat-resistant steel and has the good high-temperature property and oxidation resistance property, thus temperature parameters of the steam turbine are increased, and the power generating efficiency of the steam turbine is improved advantageously.

Embodiments of the invention provide methods and materials for chemical cross-coupling reactions that utilize aryl alcohol derivatives as cross-coupling partners. Embodiments of the invention include methods for the amination of aryl sulfamates and carbamates, which are attractive cross-coupling partners, particularly for use in multistep synthesis. Illustrative embodiments include versatile means to use simple derivatives of phenol as precursors to polysubstituted aryl amines, as exemplified by a concise synthesis of the antibacterial drug linezolid.

A polymer comprising recurring units having a partial structure of formula (1) wherein R¹ is a single bond or alkylene or fluoroalkylene, R² and R³ are H or alkyl or fluoroalkyl, at least one of R² and R³ contains at least one fluorine atom is used as a base resin to formulate a resist composition which has advantages including high transparency to radiation having a wavelength of up to 200 nm, substrate adhesion, developer affinity and dry etching resistance.

The present invention is directed to tyrosine phosphorylated forms of Cip/Kip proteins including p27Kip1, fragments of these forms and antibodies thereto. The invention is further related to non-phosphorylatable forms of Cip/Kip proteins, or fragments thereof. Further embodiments are diagnostic or therapeutic uses of the disclosed compounds, in particular uses in diagnostics and therapy of hyperproliferative diseases.

The invention relates to a polypeptide comprising an amino acid having a cyclopropene group wherein said cyclopropene group is joined to the amino acid via a carbamate group. Suitably the cyclopropene group is a 1,3-disubstituted cyclopropene such as a 1,3-dimethylcyclopropene. Suitably the cyclopropene group is present as a residue of a lysine amino acid. The invention also relates to methods of making the polypeptides. The invention also relates to an amino acid comprising cyclopropene wherein said cyclopropene group is joined to the amino acid moiety via a carbamate group.

A nano-structured ceramic film engineered for the study of biological samples. The films have a plurality of pores with a narrow and ordered pore-size distribution with pore diameters between 50 nm to 400 nm (±10%). The films are doping with metal compositions that provide fluorescence resonance energy transfer (FRET) capabilities with significant fluorescence signal enhancement and low noise. A hairpin DNA construct with a quencher and fluorophore is covalently linked to the surface (including inside the pores) of the ceramic film and configured to react to any target sequences in solution, resulting in separation of the quencher-fluorophore pair. The chelated metal ion FRET centers doped within the nano-structure ceramic film provider for long lasting fluorescence signals with less noise.

The invention relates to RNA production and processing in plastids of higher plants.