Single-crystal production apparatus

A manufacturing device and single crystal technology, which is applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of metal pollution, pollution, easy scattering of fibers, etc., and achieve the effect of preventing impurity pollution and improving heat preservation

Inactive Publication Date: 2007-09-19
SHIN-ETSU HANDOTAI CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0020] However, when cultivating silicon single crystals, if heavy metals such as Fe and Cu are released from the gas straightening cylinder, these heavy metal components will first adhere to the surface of the single crystal being cultured, and then in the process of cooling from high temperature to room temperature, Diffusion of Fe and Cu from the periphery of the crystal will occur, causing metal contamination in the periphery of the single crystal, especially from the periphery of the single crystal to the periphery within 10% of the diameter
Among them, the heat insulating material made of carbon fiber is not only low in purity compared with graphite members, but also has the problem of easily causing contamination by Fe, Cu, etc. because fibers tend to scatter during the cultivation of single crystals.

Method used

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Examples

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Embodiment 1

[0065] Using the single crystal manufacturing device 20 shown in Figure 1, 150kg of raw material polycrystalline silicon is placed in a quartz crucible 5 with a diameter of 24 inches (600mm), and pulled by the CZ method with a diameter of 8 inches (200mm) and an orientation , Silicon single crystal with an oxygen concentration of 22-23ppma (ATSM'79). From the ceiling of the pulling chamber 2, in the mode of surrounding the single crystal in the single crystal growth direction, in the inner side of the lower end of the gas straightening cylinder 17 made of graphite hanging down, a gas bubble (a bubble diameter of 30 to 120 μm and a bubble density of 2 μm) is set. ×10 5 piece / cm 3 ~3×10 5 piece / cm 3 ) quartz material 19, and its logarithmic viscosity at 1250° C. is 12 poise, its occupancy rate relative to the inner surface area is 90%, its thickness is 10 mm, and its height is 150 mm. Furthermore, the bubble density contained in the quartz material is calculated by observing...

Embodiment 2

[0088] In addition to using a gas rectifying cylinder, it is arranged inside the lower end of the gas rectifying cylinder 17 in the single crystal manufacturing device 20, which contains bubbles (the diameter of the bubble is 30 ~ 120 μm, the density of the bubble is 5 × 10 4 piece / cm 3 ) of quartz material 19, except that its logarithmic viscosity at 1250° C. is 10 poise, its occupancy to the inner surface area is 90%, its thickness is 10 mm, and its height is 150 mm, it is manufactured using the same single crystal as in Example 1. device, and pull a silicon single crystal with a diameter of 8 inches (200 mm), an orientation , and an oxygen concentration of 22 to 23 ppma (ATSM'79) by the CZ method. Furthermore, as the pulling speed conditions when pulling the single crystal, the same as in Example 1, the pulling speed from the body of the single crystal between 10 cm and 110 cm is in the range of 0.7 mm / min to 0.3 mm / min Inside, it is controlled to gradually reduce the pull...

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Abstract

A single-crystal production apparatus for growing of a silicon single-crystal according to the Czochralski method, characterized by having at least a gas rectifier tube disposed so as to surround a silicon single-crystal in a chamber for carrying out the single-crystal growing and capable of aligning the stream of gas introduced in the chamber, the gas rectifier tube having a foamed quartz material disposed thereinside. Thus, in the growing of CZ silicon single-crystal, constantly controlling of single-crystal in-plane radial F / G at a given value can be accomplished to thereby enable efficient production of a silicon single-crystal having in-plane uniform desirable defect regions. Further, any Fe and Cu impurity contamination can be avoided to thereby provide a single-crystal production apparatus capable of production of a high-quality silicon single-crystal.

Description

technical field [0001] The present invention relates to a single crystal production device for producing a silicon single crystal by the Czochralski Method (hereinafter referred to as the CZ method), and more specifically relates to a single crystal production device which is used in the pulling unit During crystallization, the temperature gradient near the solid-liquid interface in the direction of the long axis of the crystal can be controlled so that it becomes uniform in the diameter direction of the single crystal, thus, a silicon single crystal can be produced, and the required defect region is on the surface. In addition, it is possible to produce a high-quality silicon single crystal with less pollution caused by impurity metal elements. Background technique [0002] Single crystals used as substrates of semiconductor devices, such as silicon single crystals, are mainly produced by the CZ method. In recent years, the high-integration and miniaturization of semicondu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B15/00
CPCC30B15/20C30B29/06Y10T117/1032C30B15/14C30B15/00
Inventor 樱田昌弘
Owner SHIN-ETSU HANDOTAI CO LTD
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