A kind of automatic temperature regulation method of Czochralski silicon single crystal

A technology of Czochralski silicon and automatic adjustment, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., and can solve problems such as long distance, low measurement accuracy, and inconsistency

Active Publication Date: 2021-07-06
LONGI GREEN ENERGY TECH CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This process requires manual participation and is judged based on past experience, which is uncertain
In addition, during the temperature adjustment process, the liquid inside the furnace body is in a high-temperature, high-vacuum environment, and a temperature measuring device is used to measure the surface temperature of the liquid. The distance between the temperature measuring device and the surface to be measured is relatively long, and the anti-interference ability is poor, resulting in low measurement accuracy.
The above problems lead to many uncertainties in the temperature adjustment process. Uncertain factors such as different personnel, different furnace platforms, and different technical levels lead to completely different results of temperature adjustment. Unstable temperature in processes such as turning shoulders and equal diameters, which affects cost and product quality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of automatic temperature regulation method of Czochralski silicon single crystal
  • A kind of automatic temperature regulation method of Czochralski silicon single crystal
  • A kind of automatic temperature regulation method of Czochralski silicon single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0046] combine figure 1 , the automatic temperature adjustment method of the Czochralski silicon single crystal in this embodiment includes a temperature adjustment process and a temperature stabilization process, specifically including the following steps:

[0047] 1. Set the initial power setting value Pi in the control system. In this embodiment, Pi is 55.0kw;

[0048] Set the target temperature value Ts: the control system automatically records the seeding temperature of the previous N times, N≥5, under the same process conditions, and performs average value processing as the target temperature value Ts;

[0049] The same process conditions refer to the use of the same heater, insulation components, heat exchange components and other related components that affect the temperature in the single crystal furnace.

[0050] 2. Taking t as the fixed cycle time, measure the actual temperature T of the liquid surface of the silicon melt; wherein, the range of t can be 100-3000s. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The automatic temperature adjustment method for Czochralski silicon single crystal disclosed by the present invention is used for automatic adjustment of the liquid surface temperature, comprising the following steps: setting the target liquid surface temperature value Ts, measuring the actual liquid surface temperature value T, and taking t as the fixed cycle time Calculate the difference ΔT between the actual liquid surface temperature T and the target liquid surface temperature Ts; judge whether ΔT is within a given range; if yes, enter the temperature stabilization process, if not, perform the temperature adjustment process; The value ΔT is calculated to obtain the power adjustment amount ΔPower and the power setting value Pr, the output power setting value Pr, and then adjust the temperature of the silicon melt surface. The present invention cancels the control that SP participates in, eliminates unstable factors, improves the stability of the system control temperature, improves the uniformity of temperature adjustment, improves the yield and reduces the production cost.

Description

technical field [0001] The invention belongs to the technical field of single crystal growth technology, and in particular relates to an automatic temperature adjustment method for Czochralski silicon single crystal. Background technique [0002] With the rapid development of the global economy, human demand for energy continues to grow, but fossil fuels such as coal, oil, and natural gas are gradually being exhausted. As a green energy, solar energy is being more and more accepted and applied by human beings, and it has been paid more and more attention by countries all over the world and has been vigorously developed. Silicon single crystal is the initial raw material for manufacturing photovoltaic modules. [0003] The manufacturing process of Czochralski silicon single crystal is to put polysilicon material into a quartz crucible, heat and melt to form liquid silicon material, and then go through six steps of temperature adjustment, seeding, shouldering, shoulder turnin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/20C30B29/06
CPCC30B15/20C30B29/06
Inventor 王正远李侨周锐徐战军
Owner LONGI GREEN ENERGY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products