CZ (Czochralski) silicon rod doped with boron and phosphorus, and method for rapidly analyzing contents of boron and phosphorus in ingredients
A technology of silicon rods, boron and phosphorus, applied in the direction of material resistance, etc., can solve the problems of delaying analysis time, not being able to know the content of boron and phosphorus, and increasing costs, so as to improve the process level and reduce the cost of quality appraisal
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[0062] Production of monocrystalline silicon ingots with an average diameter of 157mm and a furnace load of 65kg. The measured resistivity of the head of the ingot is P-type 3Ω·CM, and the resistivity of the ingot at 1215mm is P-type 2.6Ω·CM:
[0063] According to the above method: to produce this silicon rod, the equivalent resistivity of phosphorus in the ingredients is 1.484Ω·CM, and the concentration is 3.19*10 15 / cm 3 , the equivalent resistivity of boron is 1.873Ω·CM, and the concentration is 7.57*10 15 / cm 3 , the resistivity of the silicon rod at 1000mm is P-type 2.66Ω·CM, and the resistivity corresponding to boron at the silicon rod 600mm is 2.16Ω·CM. See attached picture 1.
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