CZ (Czochralski) silicon rod doped with boron and phosphorus, and method for rapidly analyzing contents of boron and phosphorus in ingredients

A technology of silicon rods, boron and phosphorus, applied in the direction of material resistance, etc., can solve the problems of delaying analysis time, not being able to know the content of boron and phosphorus, and increasing costs, so as to improve the process level and reduce the cost of quality appraisal

Inactive Publication Date: 2011-06-01
王正园
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Problems solved by technology

[0002] At present, in the production of CZ silicon rods, especially in the field of solar energy, there are often boron-containing silicon materials and phosphorus-containing silicon materials in the batching process. After the silicon rods are produced, it is impossible to know witho...

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  • CZ (Czochralski) silicon rod doped with boron and phosphorus, and method for rapidly analyzing contents of boron and phosphorus in ingredients
  • CZ (Czochralski) silicon rod doped with boron and phosphorus, and method for rapidly analyzing contents of boron and phosphorus in ingredients
  • CZ (Czochralski) silicon rod doped with boron and phosphorus, and method for rapidly analyzing contents of boron and phosphorus in ingredients

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example 1

[0062] Production of monocrystalline silicon ingots with an average diameter of 157mm and a furnace load of 65kg. The measured resistivity of the head of the ingot is P-type 3Ω·CM, and the resistivity of the ingot at 1215mm is P-type 2.6Ω·CM:

[0063] According to the above method: to produce this silicon rod, the equivalent resistivity of phosphorus in the ingredients is 1.484Ω·CM, and the concentration is 3.19*10 15 / cm 3 , the equivalent resistivity of boron is 1.873Ω·CM, and the concentration is 7.57*10 15 / cm 3 , the resistivity of the silicon rod at 1000mm is P-type 2.66Ω·CM, and the resistivity corresponding to boron at the silicon rod 600mm is 2.16Ω·CM. See attached picture 1.

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Abstract

The invention relates to a CZ (Czochralski) silicon rod doped with boron and phosphorus, and a method for rapidly analyzing the contents of boron and phosphorus in ingredients. The method provided by the invention comprises the following steps: firstly, calculating the head doping concentration of the CZ silicon rod and the doping concentration in a certain length; deriving the contents of the boron and phosphorus in the ingredients of the CZ silicon rod according to the formulas (4), (5) and (6), and converting into the corresponding resistivity; and simultaneously, calculating the resistivity and equivalent resistivity caused by the content of the boron in any length on the silicon rod according to the formula (4). The invention has the advantage of accurate, convenient and rapid calculation, reduces the testing cost and expense of silicon materials, can be used in the aspects of quality identification of solar energy level CZ single crystals, quality identification of semiconductor CZ single crystals, quality identification of the silicon materials and the like, and has wide application prospects.

Description

technical field [0001] The invention relates to a rapid analysis method for boron and phosphorus content in boron and phosphorus doped CZ silicon rods and ingredients. Background technique [0002] At present, in the production of CZ silicon rods, especially in the field of solar energy, there are often boron-containing silicon materials and phosphorus-containing silicon materials in the batching process. After the silicon rods are produced, it is impossible to know without elemental analysis and testing. For the content of boron and phosphorus in raw materials, the cost of elemental analysis is generally 2000-3000 yuan, and the cycle is about 1 week, which increases the cost of the quality identification of silicon materials and delays the analysis time. Contents of the invention [0003] The object of the present invention is to provide an analysis method capable of quickly analyzing the content of boron and phosphorus in boron and phosphorus-doped CZ silicon rods and in...

Claims

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Application Information

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IPC IPC(8): G01N27/04
Inventor 石坚
Owner 王正园
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