Method of forming parallel capacitor and parallel capacitor
A technology of capacitors and parallel connections, which is applied in the direction of capacitors, electric solid devices, circuits, etc., and can solve the problem of increasing the capacitor capacitance value of the PIP structure
Inactive Publication Date: 2019-12-06
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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[0004] The object of the present invention is to provide a method for forming a parallel capacitor and a parallel capacitor, to solve the problem of increasing the capacitance value of a capacitor with a PIP structure without adding additional process steps
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[0033] The method for forming a parallel capacitor and the parallel capacitor proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. According to the following description and claims, the advantages and features of the present invention will be clearer. It should be noted that the drawings are in a very simplified form and all use imprecise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. In addition, the structure shown in the drawings is often part of the actual structure. In particular, the focus of each drawing is different, and different scales are sometimes used.
[0034] The present invention provides a method of forming a parallel capacitor, with reference to figure 1 , figure 1 It is a flowchart of a method for forming a parallel capacitor according to an embodiment of the present invention...
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The invention provides a method for forming a parallel capacitor and the parallel capacitor, and the method for forming the parallel capacitor comprises the steps: providing a substrate, forming a first conductive layer, a first dielectric layer and a second conductive layer on the substrate, and enabling the first conductive layer, the first dielectric layer and the second conductive layer to form a first capacitor; forming a second dielectric layer and an isolation layer on the second conductive layer, and performing grinding to remove the isolation layer on the second dielectric layer; andforming an interconnection layer on the second dielectric layer, wherein the interconnection layer, the second dielectric layer and the second conductive layer form a second capacitor, and the first capacitor and the capacitor form a parallel capacitor. The second capacitor connected with the first capacitor in parallel is formed without adding a new photomask, so that the total capacitance valueof the device is improved.
Description
Technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a parallel capacitor and a parallel capacitor. Background technique [0002] PIP (polysilicon-insulating layer-polysilicon) capacitor is a device widely used in frequency modulation and preventing noise from analog circuits. [0003] However, the current PIP structure capacitor usually has the problem of small capacitance value, which leads to the defect of poor filtering effect of the integrated circuit. At present, in order to increase the capacitance of the PIP structure capacitor, the usual method is to use a new photomask to form another PIP structure capacitor in parallel with a PIP structure capacitor, but this will add additional photolithography and etching. Waiting for multiple process steps, this will inevitably increase the process time and reduce the work efficiency. At the same time, it does not meet the requirements of sma...
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IPC IPC(8): H01L23/522H01L49/02H01L21/48H10N97/00
CPCH01L23/5223H01L28/40H01L21/4814
Inventor 邹永金
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP