Manufacturing method of parallel PPS capacitor and parallel PPS capacitor
A manufacturing method and capacitor technology, applied in capacitors, electric solid devices, circuits, etc., can solve problems such as increasing the capacitance value of PPS capacitors
Pending Publication Date: 2020-04-21
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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[0004] The purpose of the present invention is to provide a method for making parallel PPS capacitors and parallel PPS capacitors, to solve the problem of increasing the capacitance of PPS capacitors without adding additional process steps
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[0030] The manufacturing method of the parallel PPS capacitor and the parallel PPS capacitor proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention. In addition, the structures shown in the drawings are often a part of the actual structure. In particular, each drawing needs to display different emphases, and sometimes uses different scales.
[0031] The present invention provides a kind of manufacturing method of parallel PPS capacitor, refer to figure 1 , figure 1 It is a flowchart of a method for manufacturing a parallel PPS capacitor according to an embodiment of ...
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The invention provides a manufacturing method of a parallel PPS capacitor and the parallel PPS capacitor. The manufacturing method of the parallel PPS capacitor comprises the steps: providing a substrate, and forming a first polycrystalline silicon layer, a first dielectric layer, a second polycrystalline silicon layer, a second dielectric layer and a third polycrystalline silicon layer on the substrate; forming a first groove and a second groove by using a first photomask; forming an isolation layer; and forming a first plug, a second plug and a third plug by using a second photomask. A firstPPS capacitor composed of the first polycrystalline silicon layer, the first dielectric layer and the second polycrystalline silicon layer is additionally arranged without multiple process steps suchas photoetching, etching and the like , and the existing first polycrystalline silicon layer and the existing first dielectric layer are greatly and efficiently utilized so that the total capacitancevalue of the device is remarkably improved.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a parallel PPS capacitor and the parallel PPS capacitor. Background technique [0002] PPS (polypropylene film, polypropylene film) capacitor is a device widely used in frequency modulation and preventing analog circuits from emitting noise. lower electrode and upper electrode. [0003] However, currently in semiconductor devices, the PPS capacitor usually has a problem of small capacitance value, which leads to the defect that the filtering effect of the integrated circuit is poor. At present, in order to increase the capacitance value of the PPS capacitor, the usual practice is to use a new photomask to form a new plug on a PPS capacitor in the logic area, thereby forming another PPS capacitor connected in parallel with it, but this will increase the photolithography additionally. , etching and other multi-channel process steps, ...
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IPC IPC(8): H01L49/02H10N97/00
CPCH01L28/40
Inventor 汤志林王卉付永琴
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP