A kind of diamond microchannel Cu-based CVD diamond heat sink and its preparation method

A diamond and micro-channel technology, which is applied in the direction of modification through conduction and heat transfer, cooling/ventilation/heating modification, electrical components, etc., can solve the problems of damage to electronic components, large thermal expansion coefficient, etc., and achieve easy peeling and excellent heat dissipation performance , the effect of increasing the nucleation density and growth rate

Active Publication Date: 2020-11-03
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the large thermal expansion coefficient of Ag, Cu, Al and other traditional heat dissipation materials for electronic packaging, thermal expansion after heating is easy to cause cyclic thermal stress to damage electronic components, which obviously cannot meet the requirements of current advanced electronic technology for packaging heat dissipation materials.

Method used

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  • A kind of diamond microchannel Cu-based CVD diamond heat sink and its preparation method
  • A kind of diamond microchannel Cu-based CVD diamond heat sink and its preparation method
  • A kind of diamond microchannel Cu-based CVD diamond heat sink and its preparation method

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preparation example Construction

[0065] A kind of preparation method of diamond microchannel Cu base CVD diamond heat sink of the present invention comprises the following steps:

[0066] S1. Wire cutting the oxygen-free copper substrate with a purity of 99.99% to 99.999% and a diameter of 10 to 20 mm into copper sheets of 0.5 to 1 mm as a Cu substrate, and cleaning the surface of the Cu substrate;

[0067] S2. Fabrication of the micro-via template, the micro-via template adopts oxygen-free copper with the same specifications as the Cu substrate;

[0068] S201. Substrate punching and punching, micro-through-hole manufacturing process includes mechanical punching and drilling, hydraulic drilling, laser drilling, drilling machine drilling, etc.; 0.5mm, channel spacing 2 ~ 3mm; the shape of the micro-through hole includes circle, regular triangle, square, regular hexagon or regular octagon, etc., such as Figure 5 shown;

[0069] S202, using a hydrochloric acid solution with a volume ratio of 0.5% to slightly ...

Embodiment 1

[0091] S1, cutting the oxygen-free copper substrate with a purity of 99.99% and a diameter of 10mm into 0.5mm copper sheets as the Cu substrate, and cleaning the surface of the Cu substrate;

[0092] S201, Cu substrate stamping and drilling, the micro-via manufacturing process includes mechanical stamping and drilling, hydraulic drilling, laser drilling, drilling, etc.; the micro-via template is composed of a micro-via array, and the diameter of the micro-via is 0.3 mm, the channel spacing is 2mm; the shape of micro-vias includes circle, regular triangle, square, regular hexagon or regular octagon;

[0093] S202, use a hydrochloric acid solution with a volume ratio of 0.5% to slightly corrode the Cu substrate and the micro-via template for 3 minutes, and remove the oxide film and processing burrs in the micro-via;

[0094] S203, using acetone, alcohol, and deionized water to ultrasonically clean the substrate and the micro-via template for 3 minutes, remove organic matter on t...

Embodiment 2

[0112] S1. Wire cutting the oxygen-free copper substrate with a purity of 99.99% and a diameter of 14mm into 0.7mm copper sheets as a Cu substrate, and cleaning the surface of the Cu substrate;

[0113] S201, Cu substrate stamping and drilling, the micro-via manufacturing process includes mechanical stamping and drilling, hydraulic drilling, laser drilling, drilling, etc.; the micro-via template is composed of a micro-via array, and the diameter of the micro-via is 0.4 mm, the channel spacing is 2mm; the shape of micro-vias includes circle, regular triangle, square, regular hexagon or regular octagon;

[0114] S202, use a hydrochloric acid solution with a volume ratio of 0.5% to slightly corrode the Cu substrate and the micro-via template for 4 minutes, and remove the oxide film and processing burrs in the micro-via;

[0115] S203, sequentially use acetone, alcohol, and deionized water to ultrasonically clean the substrate and the micro-via template for 4 minutes, remove organ...

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Abstract

The invention discloses a diamond micro-channel Cu-based CVD diamond heat sink sheet and a preparation method thereof. The diamond micro-channel Cu-based CVD diamond heat sink sheet sequentially comprises a Cu substrate, a micro-through-hole template and a CVD diamond film from bottom to top, wherein the Cu substrate and the micro-through-hole template are provided with nano-diamond particles therebetween, the Cu substrate is embedded with a diamond micro-channel array, the diameter of each diamond micro-channel ranges from 0.3mm to 0.5mm, and the distance between every two micro-channels ranges from 2mm to 3mm. The heat dissipation effect of the heat sink sheet is superior to that of traditional heat sink sheets such as Ag, Cu and Al; the heat dissipation performance of the micro-channelCu-based diamond heat sink sheet is better; the nucleation density and the growth rate of diamond in the micro-through-hole are greatly improved; and the CVD selective growth of the diamond film is realized in the micro-through holes.

Description

technical field [0001] The invention belongs to the technical field of diamond material application, and in particular relates to a diamond microchannel Cu-based CVD diamond heat sink and a preparation method thereof. Background technique [0002] With the rapid development of microelectronics integration technology and high-density assembly technology of air-core printed boards, the design and production of electronic components and electronic systems continue to develop in the direction of miniaturization, light weight, compactness, and high efficiency. The power density of electronic components and electronic systems is getting higher and higher, resulting in a large amount of heat generated during operation. If the heat is not removed in time, it will seriously affect the working stability, safety and reliability of electronic components and electronic systems. Therefore, , the problem of heat dissipation has become a key issue to be solved urgently in the field of elect...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L23/373
CPCH05K7/2039
InventorηŽ‹θΏ›ε†›
OwnerSHAANXI UNIV OF SCI & TECH