A preparation method of Cu-based CVD diamond heat sink with micro-through holes
A diamond and micro-via technology, which is applied in the field of micro-via Cu-based CVD diamond heat sink and its preparation, can solve the problems of damage to electronic components and large thermal expansion coefficient, and achieve improved adhesion, excellent heat dissipation performance, Excellent cooling effect
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[0053] A preparation method of a micro-through hole Cu-based CVD diamond heat sink sheet of the present invention comprises the following steps:
[0054] S1, cleaning the surface of the Cu substrate;
[0055] see figure 2 , and cut the oxygen-free copper base wire with a purity of 99.99% to 99.999% and a diameter of 10 to 20 mm into copper sheets of 0.5 to 1 mm as a Cu base.
[0056] The Cu substrate was cleaned with hydrochloric acid solution, acetone, alcohol, and deionized water in sequence for 3 to 5 minutes to remove the oxide film and organic matter on the surface of the Cu substrate, and dried with nitrogen.
[0057] S2, the surface of the Cu substrate is evaporated to form a carbide metal transition layer, which improves the bonding force between the Cu substrate and the diamond.
[0058] Main process parameters: sputtering power 80-100W, air pressure 1.0-1.5Pa, temperature 300-400℃, Ar gas flow 20-30sccm, time 10-15min; metal transition layer materials include tung...
Embodiment 1
[0073] S1. Cut an oxygen-free copper substrate wire with a purity of 99.99% and a diameter of 10 mm into 0.5 mm copper sheets as the Cu substrate, and sequentially use hydrochloric acid solution, acetone, alcohol, and deionized water to clean the Cu substrate for 3 minutes to remove the oxide film and Cu substrate. Organic matter on the surface of the substrate, blow dry with nitrogen;
[0074] S2. Control sputtering power of 80W, air pressure of 1.0Pa, temperature of 300°C, Ar gas flow of 20sccm, and time of 10min; metal transition layer materials include tungsten, molybdenum, titanium, iron, chromium, nickel, cobalt, hafnium, zirconium, neodymium, vanadium , tantalum, yttrium or aluminum, etc., form a carbide metal transition layer by vapor deposition on the surface of the Cu substrate;
[0075] S3. Electrostatically assemble diamond nanoparticles on the surface of the transition metal to improve the nucleation density of diamond on the metal transition layer, and the diamon...
Embodiment 2
[0083] S1. Cut an oxygen-free copper substrate wire with a purity of 99.99% and a diameter of 14 mm into 0.6 mm copper sheets as the Cu substrate, and sequentially use hydrochloric acid solution, acetone, alcohol, and deionized water to clean the Cu substrate for 4 minutes to remove the oxide film and Cu substrate. Organic matter on the surface of the substrate, dry with nitrogen;
[0084] S2. Control sputtering power of 80-100W, pressure of 1.2Pa, temperature of 340°C, flow of Ar gas of 24sccm, and time of 12min; metal transition layer materials include tungsten, molybdenum, titanium, iron, chromium, nickel, cobalt, hafnium, zirconium, neodymium , vanadium, tantalum, yttrium or aluminum, etc., to form a carbide metal transition layer by vapor deposition on the surface of the Cu substrate;
[0085] S3. Electrostatically assemble diamond nanoparticles on the surface of the transition metal to improve the nucleation density of diamond on the metal transition layer, and the diamo...
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