Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Electron transport layer, light emitting device and preparation method thereof

An electron transport layer and light-emitting device technology, which is applied in the fields of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of reducing the light-emitting performance of quantum dot thin films, and achieve the effects of good electrical stability and improved service life.

Active Publication Date: 2021-10-08
NANJING TECH CORP LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the widely used low-temperature alcohol phase colloidal ZnO nanocrystal film is in contact with the quantum dot layer, the existence of a large number of surface states makes the interaction between the excited states in the ZnO nanocrystal and the quantum dot, resulting in the remarkable luminescence performance of the quantum dot film. reduce

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electron transport layer, light emitting device and preparation method thereof
  • Electron transport layer, light emitting device and preparation method thereof
  • Electron transport layer, light emitting device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0042] The present invention also provides a preparation method of the above-mentioned light-emitting device:

[0043] When the light-emitting device is an inverted device, the preparation method is as follows: providing a first electrode 1, setting a zinc oxide nanocrystal solution on the first electrode 1, forming a zinc oxide nanocrystal film 21 after drying, and forming a zinc oxide nanocrystal film 21 on the zinc oxide nanocrystal film 21. Deposit a layer of zinc oxide deposition film 22, prepare a light-emitting layer 3 on the zinc oxide deposition film 22, optionally set a hole transport layer 5 and / or a hole injection layer 6 on the light-emitting layer 3, and then set the second electrode 4;

[0044] When the light-emitting device is a positive-type device, the preparation method is to provide a second electrode 4, optionally arrange a hole injection layer 6 and / or a hole transport layer 5 on the second electrode 4, and then prepare a light-emitting layer 3, in A zin...

Embodiment 1

[0050] Fabrication of Inverse Light Emitting Devices

[0051] (1) Clean the anode ITO (indium tin oxide) with a thickness of 180nm: ultrasonically clean with ethanol, deionized water and acetone for 10min, and then use N 2 The liquid adhering to the ITO surface was blown dry, and treated with oxygen plasma for 10 minutes to remove impurities on the ITO surface to obtain a clean ITO transparent conductive glass.

[0052] (2) Make zinc oxide nanocrystal film: spin-coat zinc oxide nanocrystal solution (zinc oxide nanocrystal is Zn 0.85 Mg 0.15 O nanocrystals, the solvent is ethanol, the concentration is 30mg / mL), and the spin coating time is 50s. After the spin coating is completed, it is annealed at 120°C for 30min in the glove box, and finally a layer of zinc oxide nanocrystal film is formed on the ITO surface.

[0053] (3) Manufacture of zinc oxide deposited film: the composition of Zn was prepared on the zinc oxide nanocrystalline film by radio frequency sputtering process....

Embodiment 2

[0058] Fabrication of positive light-emitting devices

[0059] (1) Clean the anode ITO (indium tin oxide) with a thickness of 180nm: ultrasonically clean with ethanol, deionized water and acetone for 10min, and then use N 2 The liquid adhering to the ITO surface was blown dry, and treated with oxygen plasma for 10 minutes to remove impurities on the ITO surface to obtain a clean ITO transparent conductive glass.

[0060] (2) Make the hole injection layer and the hole transport layer: In the air environment, spin-coat PEDOT:PSS (polystyrene sulfonic acid solution) at a speed of 4000 rpm on the clean ITO transparent conductive glass, time After the spin coating is completed, it is annealed at 150°C in the air for 30 minutes, then transferred to a glove box in a nitrogen atmosphere, annealed at 130°C for 20 minutes, and finally forms a layer of PEDOT:PSS layer on the surface of ITO, namely Form a hole injection layer; then spin-coat poly((9,9-dioctylfluorene-2,7-diyl)-co(4,4'-( ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an electron transport layer, a light-emitting device and a preparation method thereof. The light-emitting device includes a first electrode, an electron transport layer, a light-emitting layer, an optional hole transport layer, an optional hole injection layer, and a second electrode arranged in sequence, wherein the electron transport layer includes zinc oxide nanocrystalline film and zinc oxide A deposited film, the zinc oxide nanocrystalline film is adjacent to the first electrode, the zinc oxide deposited film is adjacent to the light-emitting layer, the material of the zinc oxide nanocrystalline film is a doped or undoped zinc oxide nanocrystalline material, and the zinc oxide deposited film is The material is doped or undoped zinc oxide bulk material. In the light-emitting device of the present invention, a zinc oxide deposited film is added as an interface layer between the zinc oxide nanocrystal film and the light-emitting layer, which avoids the interaction between the zinc oxide nanocrystal and the light-emitting material from affecting the performance of the light-emitting device, and the zinc oxide deposited film is The bulk material has good electrical stability, which is beneficial to improving the service life of the light emitting device.

Description

technical field [0001] The invention relates to the technical field of light emitting devices, in particular to an electron transport layer, a light emitting device and a preparation method thereof. Background technique [0002] Zinc oxide (ZnO) is a typical n-type oxide semiconductor with high carrier mobility, adjustable energy band structure, and high transmittance in the visible light band. Colloidal zinc oxide nanocrystals also have excellent solution stability. Processability. At present, ZnO nanocrystals are widely used as an electron transport layer in high-performance quantum dot light-emitting diodes. However, when the widely used low-temperature alcohol phase colloidal ZnO nanocrystal film is in contact with the quantum dot layer, the existence of a large number of surface states makes the interaction between the excited states in the ZnO nanocrystal and the quantum dot, resulting in the remarkable luminescence performance of the quantum dot film. reduce. [00...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K30/865H10K50/16H10K50/00H10K71/00
Inventor 张振星
Owner NANJING TECH CORP LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com