A method for preparing three-dimensional superstretchable crystalline nanowires

Abstract

A method for preparing three-dimensional super-stretchable crystalline nanowires, 1) using PECVD or PVD to deposit a layer of insulating dielectric layer on the substrate as a sacrificial layer, 2) using photolithography and electron beam direct writing to define periodic step edges pattern, use dry or wet alternate etching process to etch the dielectric layer to form vertical step sidewall; 3) treat the step surface with corrosive liquid to form wavy steps; 4) photolithography electron beam direct writing or mask plate again Technical definition The pattern perpendicular to the step and the etching technology are used to prepare the secondary guide channel perpendicular to the step; 5) A strip-shaped catalytic metal layer is locally deposited by photolithography, evaporation or sputtering; 6) Catalytic The metal layer is converted into separated metal nanoparticles; 7) The temperature is lowered below the melting point of the catalytic metal particles, and the entire structure surface is deposited to cover the amorphous semiconductor precursor thin film layer; the crystalline nanowires are deposited; the nanowires will be along the Guided channel growth of wavy steps.

Description

technical field [0001] The invention relates to a method for obtaining super-stretchable crystalline nanowires (nanowire) by channel guiding technology, in particular to a method for forming large-area, easy-to-locate wave-shaped guiding channels by using two etching processes. Background technique [0002] Semiconductor crystalline silicon nanowire (Nanowire) is the core material of modern microelectronics technology due to its high carrier mobility and the ability to achieve efficient, stable and reliable doping processes. Here, the inventor of the present application is the earliest A planar solid-liquid-solid (IP SLS) growth mode is proposed, in which amorphous silicon is used as a precursor, and crystalline silicon nanowire structures are grown by absorbing amorphous silicon with low melting point metal indium and tin nanoparticles. At the same time, three-dimensional nano-steps can be prepared by using two-time etching technology, and the steps are used as a guide. The...

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