Fast recovery diode chip structure

A fast recovery, chip structure technology, applied in electrical components, electrical solid devices, circuits, etc., can solve the problems of cumbersome welding, time-consuming, inconvenient disassembly and assembly, and achieves low production cost, high qualification rate, and easy disassembly and assembly. The effect of overhaul

Pending Publication Date: 2020-04-24
深圳市芯域联合半导体科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a fast recovery diode chip structure to solve the problem that the existing fast recovery diode ch

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fast recovery diode chip structure
  • Fast recovery diode chip structure

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0015] Example 1

[0016] See Figure 1-2 , An embodiment provided by the present invention: a fast recovery diode chip structure, including an upper cover 1, a lower cover 2 and a chip set 3, the chip set 3 includes a plurality of chips 4 and the welding between the plurality of chips 4 Sheet 14, both ends of the upper cover 1 are fixedly connected with a first locking block 6, and both ends of the lower cover 1 are fixedly connected with a second locking block 7, the first locking block 6 and the second locking block A locking rod 8 is inserted between the blocks 7, one end of the locking rod 8 is fixedly connected to a fixed block 9, the other end of the locking rod 8 is fixedly connected to a fixing sleeve 10, and one side of the upper cover 1 is inserted One pin 11, one end of the first pin 11 located in the upper cover 1 is provided with a first connecting piece 12, the first connecting piece 12 abuts the chipset 3, and a second lead is inserted on one side of the lower co...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a fast recovery diode chip structure. The fast recovery diode chip structure comprises an upper sealing cover, a lower sealing cover and a chipset, the chipset comprises a plurality of chips and welding sheets among the plurality of chips, first locking blocks are fixedly connected to the two ends of the upper sealing cover, second locking blocks are fixedly connected to the two ends of the lower sealing cover, locking rods are inserted between the first locking blocks and the second locking blocks, one end of each locking rod is fixedly connected with a fixing block, the other end of each locking rod is fixedly connected with a fixing sleeve, a first pin is inserted into one side of the upper sealing cover, and a first connecting piece is arranged at the end, located in the upper sealing cover, of the first pin. The fast recovery diode chip structure is simple and reasonable in construction, convenient to weld, low in manufacturing cost, high in percent of pass, convenient to disassemble, assemble and maintain and suitable for large-scale promotion.

Description

technical field [0001] The invention relates to the field of diode-related products, in particular to a fast recovery diode chip structure. Background technique [0002] At present, the domestic fast diode technology is relatively mature, but the ultra-fast recovery diode (less than 150ns) technology lag is limited, especially the ultra-fast soft recovery diode has almost no batch independent products, which cannot meet the needs of high-frequency and high-efficiency power supplies. Therefore, to speed up the research on high-power ultra-fast soft recovery diodes and improve the localization of high-end traditional devices, it is necessary to further accelerate the process. [0003] However, the existing fast recovery diode chip structure is cumbersome to weld, inconvenient to assemble and disassemble, and takes a lot of time to overhaul, which has certain defects. Contents of the invention [0004] The purpose of the present invention is to provide a fast recovery diode ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L23/02H01L23/10H01L29/861H01L25/07
CPCH01L23/02H01L23/10H01L29/861H01L25/072
Inventor 何伟业胡建权
Owner 深圳市芯域联合半导体科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products