A kind of indium aluminum zinc oxide diode with Schottky contact at the bottom and its preparation method

A Schottky contact and oxide technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., to achieve low series resistance, ensure light stability, and wide bandgap modulation range

Active Publication Date: 2021-06-29
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although people have done some research on IAZO thin films and IAZO thin film transistors (TFTs), so far there has been no report of any research team using IAZO to prepare SBDs.

Method used

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  • A kind of indium aluminum zinc oxide diode with Schottky contact at the bottom and its preparation method
  • A kind of indium aluminum zinc oxide diode with Schottky contact at the bottom and its preparation method
  • A kind of indium aluminum zinc oxide diode with Schottky contact at the bottom and its preparation method

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Experimental program
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Effect test

Embodiment 1

[0062] An indium aluminum zinc oxide diode with a bottom Schottky contact, such as figure 1 shown, including SiO arranged sequentially from bottom to top 2 / P + -Si substrate 1, first layer metal electrode Ti2, metal electrode Pd3, IAZO thin film 4, second layer metal electrode Ti5 and metal electrode Au6; IAZO thin film 4 is as semiconductor layer, between IAZO thin film 4 and metal electrode Pd3 is Xiao Tertiary contact, ohmic contact between the IAZO film 4 and the second layer metal electrode Ti5.

[0063] In this diode structure, IAZO has a very wide forbidden band width and a wide bandgap modulation range, which is beneficial to ensure the light stability of IAZO SBD device performance. The metal electrode Pd3 is the anode of the entire IAZO SBD. Pd has a high work function and can form a high potential barrier with the IAZO thin film 4. When the IAZO SBD is turned off in reverse, the high potential barrier can block the flow of carriers. Through, so as to realize the...

Embodiment 2

[0071] Embodiment 1 provides a method for preparing an indium aluminum zinc oxide diode with a Schottky contact at the bottom, including the following steps:

[0072] (1) Using electron beam evaporation on SiO 2 / P + - growing a first layer of metal electrode Ti2 on the surface of the Si substrate 1;

[0073] SiO 2 / P + - The surface of the Si substrate 1 has been polished before use. Polished SiO 2 / P + - The Si substrate 1 is beneficial to ensure that each layer of film grown has a higher flatness. SiO 2 / P + - After the Si substrate 1 is polished, the substrate is cleaned with Decon cleaning agent, deionized water, acetone or isopropanol, and ethanol in sequence, and then blown dry with nitrogen. SiO2 / P + - The cleaning of the Si substrate 1 after polishing can effectively improve the cleanliness of the substrate surface, which is conducive to improving the flatness of the film, reducing interface defects, and improving the performance of the IAZOSBD.

[0074] (...

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Abstract

The invention relates to an indium-aluminum-zinc oxide diode with a Schottky contact at the bottom and a preparation method thereof. The diode comprises SiO arranged sequentially from bottom to top 2 / P + ‑Si substrate, the first layer of metal electrode Ti, metal electrode Pd, IAZO film, the second layer of metal electrode Ti and metal electrode Au; IAZO film is used as the semiconductor layer, and the Schottky contact between the IAZO film and the metal electrode Pd, There is an ohmic contact between the IAZO film and the second layer metal electrode Ti. The invention provides an indium-aluminum-zinc oxide diode with Schottky contact at the bottom. The diode structure can be prepared at low temperature, has low manufacturing cost, and has high electrical performance. It has broad applications in future integrated circuits. Application prospect.

Description

technical field [0001] The invention relates to an indium aluminum zinc oxide diode with a schottky bottom and a preparation method thereof, belonging to the technical field of semiconductor materials and devices. Background technique [0002] Schottky barrier diode (SBD) is a semiconductor device that utilizes the contact barrier between metal and semiconductor, and has a wide range of important applications in power circuits, high-frequency circuits and other fields. Compared with ordinary PN junction diodes, it has the advantages of low forward voltage and fast response. Studies have found that SBD can be used as rectification and freewheeling components in high-frequency rectification, switching circuits and protection circuits, which can greatly reduce power consumption, improve circuit efficiency and frequency of use, and reduce circuit noise. Therefore, with the rapid development of power electronics technology, the excellent performance of SBD such as high frequency...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L29/872H01L29/24H01L21/34
CPCH01L29/247H01L29/66969H01L29/872
Inventor冯先进徐伟东
OwnerSHANDONG UNIV