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A Schottky diode based on indium aluminum zinc oxide and its preparation method

A technology of Schottky diodes and oxides, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problem of multi-element amorphous metal oxide semiconductor SBD research reports that are rare and easily affect IGZOSBD reverse leakage Current rectification performance, IGZOSBD is difficult to apply on a large scale and other issues, to achieve a wide bandgap modulation range, abundant storage, and ensure the effect of light stability

Active Publication Date: 2021-06-29
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, so far, there are few research reports on multi-component amorphous metal oxide semiconductor SBDs.
Although a few teams have prepared indium gallium zinc oxide (IGZO) SBDs with good properties [J.W.Kim, T.J.Jung, and S.M.Yoon, Device characteristics of Schottky barrier diodes using In-Ga-Zn-Osemiconductor thin films with different atomic ratios, Journal of Alloys and Compounds, 771, 658-663, 2019.], but IGZO materials still have many disadvantages, for example, due to the low binding energy of Ga-O bonds (374kJ / mol), it is not conducive to the IGZO thin film Carrier concentration can be effectively regulated, which can easily affect the reverse leakage current and rectification performance of IGZO SBD
In addition, due to the relatively small bandgap (~3.2eV) and bandgap modulation range (~2.9-4.9eV) of IGZO, the performance stability of IGZO SBD under illumination, especially ultraviolet light, still needs to be improved.
At the same time, a large number of applications of Ga elements will also increase the cost of device fabrication
The above problems make it difficult for IGZO SBD to achieve large-scale application
However, there is no research report on IAZO SBD and its preparation process

Method used

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  • A Schottky diode based on indium aluminum zinc oxide and its preparation method
  • A Schottky diode based on indium aluminum zinc oxide and its preparation method
  • A Schottky diode based on indium aluminum zinc oxide and its preparation method

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Embodiment 1

[0063] A Schottky diode based on Indium Aluminum Zinc Oxide, such as figure 1 As shown, the InAlZnO-based Schottky diode consists of SiO2 arranged sequentially from bottom to top 2 / P + -Si substrate 1, metal electrode Ti2, IAZO film 3 and double-layer metal electrode Pd, double-layer metal electrode Pd includes first layer metal electrode Pd4 and second layer metal electrode Pd5 arranged in sequence from bottom to top, IAZO film 3 It is an ohmic contact with the metal electrode Ti2, and it is a Schottky contact between the IAZO film 3 and the double-layer metal electrode Pd.

[0064] In the present invention, the band gap of the IAZO material is very wide and can be modulated in a wide range, which is beneficial to improving the stability of the performance of the IAZO SBD device under light. The metal electrode Ti2 is the cathode of the entire IAZO SBD. Ti has a low work function and can form a good ohmic contact with the IAZO film 3 to reduce the contact resistance and ob...

Embodiment 2

[0071] A kind of preparation method of the Schottky diode based on indium aluminum zinc oxide provided in embodiment 1, the steps include:

[0072] (1) on SiO 2 / P + - a metal electrode Ti2 is grown on the surface of the Si substrate 1, and Ti is used as a cathode;

[0073] In step (1), SiO 2 / P + -Si substrate 1 surface has been polished before use; Polished SiO 2 / P + - The Si substrate 1 is beneficial to ensure that each layer of film grown has a higher flatness. SiO 2 / P + - After the Si substrate 1 is polished, the substrate is cleaned with Decon cleaning agent, deionized water, acetone or isopropanol, and ethanol in sequence, and then blown dry with nitrogen. SiO 2 / P + - The cleaning of the Si substrate 1 after polishing can effectively improve the cleanliness of the substrate surface, which is conducive to improving the flatness of the film, reducing interface defects, and improving the performance of the IAZO SBD.

[0074] (2) grow IAZO thin film 3 on metal...

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Abstract

The invention relates to a Schottky diode based on indium aluminum zinc oxide and a preparation method thereof. The diode structure includes SiO arranged sequentially from bottom to top 2 / P + ‑Si substrate, metal electrode Ti, IAZO film and double-layer metal electrode Pd, double-layer metal electrode Pd includes the first layer metal electrode Pd and the second layer metal electrode Pd arranged in sequence from bottom to top, IAZO film and metal electrode The Ti is an ohmic contact, and the IAZO film and the double-layer metal electrode Pd are a Schottky contact. The present invention designs a kind of IAZO SBD with Schottky contact on the top for the first time. IAZO has a very wide forbidden band width and a wide range of bandgap modulation, which is beneficial to ensure the light stability of IAZO SBD device performance; the SBD has better Excellent electrical properties, can be prepared at low temperature, suitable for industrial production.

Description

technical field [0001] The invention relates to a schottky diode based on indium aluminum zinc oxide and a preparation method thereof, belonging to the technical field of semiconductor materials and devices. Background technique [0002] A Schottky barrier diode, referred to as a Schottky diode (SBD), is a device that uses the contact barrier between a metal and a semiconductor to work. In recent years, as market demands have changed, the application range of SBDs with higher operating frequency, smaller size and lower power consumption has also been expanding. The most typical applications of SBD include rectifier circuits, power protection circuits, voltage clamping circuits, etc. Compared with diodes with other structures, SBD has three outstanding advantages: (1) Since the barrier height of SBD is smaller than that of PN junction, the turn-on voltage and conduction voltage drop of SBD are smaller than that of PN junction diodes, so The application of SBD can significan...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/24H01L29/47H01L29/872H01L21/34H01L21/443
CPCH01L21/443H01L29/24H01L29/47H01L29/66969H01L29/872
Inventor 冯先进徐伟东
Owner SHANDONG UNIV
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