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Back-illuminated ultraviolet and infrared double-color photoelectric detector and preparation method thereof

A photodetector and back-illumination technology, applied in the field of photodetection, can solve the problems that monochromatic photodetectors cannot meet practical applications

Active Publication Date: 2020-04-28
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, at present, ultraviolet and infrared photodetectors are mainly used for their respective single-band detection, that is, the detectors in the prior art can only achieve monochromatic detection.
With the continuous improvement of people's demand for the integration of optoelectronic devices and the complexity of the actual application environment, monochromatic photodetectors are increasingly unable to meet the needs of practical applications.

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  • Back-illuminated ultraviolet and infrared double-color photoelectric detector and preparation method thereof
  • Back-illuminated ultraviolet and infrared double-color photoelectric detector and preparation method thereof
  • Back-illuminated ultraviolet and infrared double-color photoelectric detector and preparation method thereof

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Embodiment Construction

[0039] The core of the invention is to provide a back-illuminated ultraviolet-infrared double-color photodetector. In the prior art, the current ultraviolet and infrared photodetectors are mainly used for their respective single-band detection, that is, the detectors in the prior art usually can only realize monochromatic detection. With the continuous improvement of people's demand for the integration of optoelectronic devices and the complexity of the practical application environment, monochromatic photodetectors are increasingly unable to meet the needs of practical applications.

[0040] The back-illuminated ultraviolet-infrared dual-color photodetector provided by the present invention comprises a substrate, a buffer transition layer, an n-type doped layer, an unintentional doped layer and a conductive layer arranged in sequence from bottom to top. Wherein the non-intentional doping layer is provided with a micro-nano-scale pillar array facing away from the surface of th...

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Abstract

The invention discloses a back-illuminated ultraviolet and infrared double-color photoelectric detector. The photoelectric detector comprises a substrate, a buffer transition layer, an n-type doped layer, an unintentional doped layer and a conductive layer which are sequentially arranged from bottom to top, wherein a micro-nano-scale column array is arranged on the surface, which is back to the substrate, of the unintentional doped layer, and the conductive layer covers the column array. The n-type doped layer, the unintentional doped layer and the conductive layer form a photoelectric detection structure of an MIS structure, and the unintentional doped layer serves as a light absorption layer and can absorb ultraviolet light to form photon-generated carriers, so that ultraviolet light detection is achieved; due to the fact that preset thermal electrons can transit a Schottky barrier between the conductive layer and the unintentional doped layer, infrared photoelectric detection basedon surface plasmon induced thermo electron emission can be achieved at the moment, so that ultraviolet and infrared double-color detection is integrated in the same photoelectric detector. The invention also provides a preparation method which also has the above beneficial effects.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, in particular to a back-illuminated ultraviolet-infrared two-color photodetector and a method for preparing the back-illuminated ultraviolet-infrared two-color photodetector. Background technique [0002] In today's era of highly developed informatization, ultraviolet and infrared photoelectric detection materials and devices, as an important pillar of information acquisition, play an important role in national economic construction, national defense construction, and people's daily life. However, at present, ultraviolet and infrared photodetectors are mainly used for their respective single-band detection, that is, the detectors in the prior art can only realize monochromatic detection. With the continuous improvement of people's demand for the integration of optoelectronic devices and the complexity of the practical application environment, monochromatic photodetectors are incre...

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Application Information

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IPC IPC(8): H01L31/0216H01L31/0352H01L31/18
CPCH01L31/02161H01L31/0352H01L31/035272H01L31/03529H01L31/18Y02P70/50
Inventor 宋航陈一仁张志伟蒋红李志明缪国庆
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI