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Data reading method and device, storage medium and equipment

A data reading and data technology, which is applied in read-only memory, information storage, static memory, etc., can solve the problems of wrong bits, containing, etc.

Active Publication Date: 2020-05-12
合肥大唐存储科技有限公司
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  • Application Information

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Problems solved by technology

[0004] However, because the amount of charge stored in the storage unit of the flash memory is affected by various factors such as the quality, life, time, and number of erasing and writing of the storage unit, the data directly read from the flash memory will contain a large number of erroneous bits.

Method used

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  • Data reading method and device, storage medium and equipment
  • Data reading method and device, storage medium and equipment
  • Data reading method and device, storage medium and equipment

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Embodiment Construction

[0018] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application.

[0019] In the related art, according to the size of the threshold voltage of the memory cell of the flash memory, it can be obtained as figure 1 A schematic diagram of the threshold voltage distribution of memory cells of the flash memory is shown. see figure 1 As shown, when the voltage 11 or the voltage 12 is used as the read operation voltage to read the data on the flash memory, the data with the bit value of 1 or the data with the bit value of 0 in some memory cells will be read incorrectly. situation, which in turn leads to more error bits in the data read from the flash memory. And when the voltage 13 is used as the read operation voltage to read the data on the flash memory, the number of error bits of the data read from the flash memory is the least.

[0020] The...

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Abstract

The embodiment of the invention provides a data reading method and device, a storage medium and equipment, and the method comprises the steps: obtaining a first reading operation voltage, wherein an initial value of the first reading operation voltage is a preset voltage; reading data in a flash memory according to the first read operation voltage; determining whether an error corresponding to theread data in the flash memory meets a preset condition or not, wherein the error is a difference between the number of bits with a value of 0 in the read data in the flash memory and the number of bits with a value of 1; if not, dynamically adjusting the first read operation voltage based on the error to obtain a second read operation voltage; and taking the second read operation voltage as the first read operation voltage, and re-reading the data in the flash memory until the error corresponding to the read data in the flash memory meets the preset condition. In this way, the number of wrongbits for reading the data from the flash memory can be reduced.

Description

technical field [0001] The present application relates to the technical field of storage devices, and in particular to a data reading method and device, a storage medium and a device. Background technique [0002] With the rapid development of information technology, it is difficult for traditional storage media and storage technologies to meet the storage needs of users. With the wide application of mobile phones, computers and other electronic products and the large-scale construction of enterprise data centers, flash memory is replacing traditional storage devices and becoming one of the mainstream storage carriers. [0003] The memory cells of the flash memory display different levels of states by storing charges, thereby representing different data forms. When performing a read operation on a flash memory, when the read operation voltage used is greater than the threshold voltage of the memory cell, the data with a bit value of 1 is read from the memory cell; and when ...

Claims

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Application Information

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IPC IPC(8): G11C16/26G11C16/30G11C5/14
CPCG11C16/26G11C16/30G11C5/147
Inventor 袁伟
Owner 合肥大唐存储科技有限公司
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