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A data reading method and device, storage medium and equipment

A data reading and data technology, applied in the direction of read-only memory, information storage, static memory, etc., can solve the problem of containing, error bits, etc.

Active Publication Date: 2021-12-28
合肥大唐存储科技有限公司
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  • Description
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  • Application Information

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Problems solved by technology

[0004] However, because the amount of charge stored in the storage unit of the flash memory is affected by various factors such as the quality, life, time, and number of erasing and writing of the storage unit, the data directly read from the flash memory will contain a large number of erroneous bits.

Method used

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  • A data reading method and device, storage medium and equipment
  • A data reading method and device, storage medium and equipment
  • A data reading method and device, storage medium and equipment

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Embodiment Construction

[0018] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application.

[0019] In the related art, according to the size of the threshold voltage of the memory cell of the flash memory, it can be obtained as figure 1 A schematic diagram of the threshold voltage distribution of memory cells of the flash memory is shown. see figure 1 As shown, when the voltage 11 or the voltage 12 is used as the read operation voltage to read the data on the flash memory, the data with the bit value of 1 or the data with the bit value of 0 in some memory cells will be read incorrectly. situation, which in turn leads to more error bits in the data read from the flash memory. And when the voltage 13 is used as the read operation voltage to read the data on the flash memory, the number of error bits of the data read from the flash memory is the least.

[0020] Th...

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Abstract

Embodiments of the present application provide a data reading method and device, storage medium, and equipment, the method including: acquiring a first read operation voltage, wherein the initial value of the first read operation voltage is a preset voltage; The first read operation voltage is used to read the data in the flash memory; determine whether the error corresponding to the data in the read flash memory satisfies the preset condition, wherein the error is in the data in the read flash memory The difference between the number of bits with a value of 0 and the number of bits with a value of 1; if not satisfied, based on the error, the first read operation voltage is dynamically adjusted to obtain a second read An operating voltage: using the second read operating voltage as the first read operating voltage, rereading data in the flash memory until an error corresponding to the read data in the flash memory satisfies the preset condition. In this way, the number of erroneous bits in reading data from the flash memory can be reduced.

Description

technical field [0001] The present application relates to the technical field of storage devices, and in particular to a data reading method and device, a storage medium and a device. Background technique [0002] With the rapid development of information technology, it is difficult for traditional storage media and storage technologies to meet the storage needs of users. With the wide application of mobile phones, computers and other electronic products and the large-scale construction of enterprise data centers, flash memory is replacing traditional storage devices and becoming one of the mainstream storage carriers. [0003] The memory cells of the flash memory display different levels of states by storing charges, thereby representing different data forms. When performing a read operation on a flash memory, when the read operation voltage used is greater than the threshold voltage of the memory cell, the data with a bit value of 1 is read from the memory cell; and when ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/26G11C16/30G11C5/14
CPCG11C16/26G11C16/30G11C5/147
Inventor 袁伟
Owner 合肥大唐存储科技有限公司
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