Supercharge Your Innovation With Domain-Expert AI Agents!

Enhanced error correction method and deep error correction method based on double-layer RAID information

An error correction method and enhanced technology, applied in the direction of response error generation, error detection/correction, redundant code error detection, etc., can solve the problems of different action points and utilization principles, lack of data recovery ability, etc., to achieve The effect of reducing the number of error bits, wide application range, and reducing the number of error bits

Active Publication Date: 2021-08-27
杭州阿姆科技有限公司
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The present invention proposes an enhanced error correction method and a deep error correction method based on double-layer RAID information. XOR operations are also used. Although XOR operations are found in the three patents, the points of action and the principles of utilization are completely different. ; In addition, when encountering some uncorrectable data that is very important for users, the data recovery capabilities of the above two patents still have certain deficiencies

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Enhanced error correction method and deep error correction method based on double-layer RAID information
  • Enhanced error correction method and deep error correction method based on double-layer RAID information

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] Embodiment 1 of the present invention provides an enhanced error correction method based on double-layer RAID information. In this embodiment, there is no limit to which level of RAID structure is specifically used in the flash memory controller, as long as it meets the constraints described below conditions.

[0049] Specifically, such as figure 1 with figure 2 As shown, in the enhanced error correction method based on double-layer RAID information described in this embodiment, when ECC uncorrectable error data appears in the flash memory particles, the error correction method adopted includes the following steps:

[0050] In order to implement the error correction method described in this embodiment, it is necessary to add a layer of RAID protection and sacrifice part of the NAND storage space. Vertical binding can be performed for M' rows of RAID lines, and DXOR_V is the check code data of the vertical RAID lines. The size of M' can be designed according to the r...

Embodiment 2

[0078] The enhanced error correction method based on double-layer RAID information described in Embodiment 1 can solve the ECC uncorrectable scenario encountered by general SSD controllers, and can ensure the smooth progress of normal reading and writing of SSD controllers. When the user encounters some very important uncorrectable data, this embodiment provides a deep error correction method, that is, try to restore the user data without considering the impact on the read delay and read bandwidth of the SSD controller.

[0079] Such as figure 2 As shown, the deep error correction method includes the steps of:

[0080] (1) Find all other uncorrectable data in the horizontal RAID row where DATAX is located;

[0081] (2) Take any uncorrectable data in a horizontal RAID row, and restore it through the enhanced error correction method based on double-layer RAID information described in Embodiment 1. If it can be restored, use the restored new data to overwrite the previous data....

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an enhanced error correction method and a deep error correction method based on double-layer RAID information, and when error data uncorrectable in ECC occurs in flash memory particles, the enhanced error correction method comprises the following steps: S1, determining the address of uncorrectable data A, setting the positions of the data A in a transverse RAID line and a longitudinal RAID line to be respectively X and Y ', 1 < = X < = N, 1 < = Y' < = M ', and respectively recording the corresponding data as DATAX and DATAY'; S2, respectively calculating values DRAID and DRAID'obtained through transverse RAID line recovery and longitudinal RAID line recovery, S3, rereading the data A to obtain new data DATANew, and carrying out XOR and bit AND calculation on the DATANew to obtain data DATAANew, and S4, decoding a frame of obtained new data. According to the method, the error correction capability of an SSD error correction algorithm is improved, and the service life of NAND particles is prolonged.

Description

technical field [0001] The invention relates to the technical field of data storage, in particular to an enhanced error correction method and a deep error correction method based on double-layer RAID information. Background technique [0002] SSD (Solid State Drive), commonly known as solid-state hard drive, is a hard disk made of solid-state electronic storage chip arrays. It usually includes three major parts, namely SSD main control chip, flash memory particle array for storing data, and cache chip. Solid-state drives have the characteristics of fast reading and writing, light weight, low energy consumption, and small size that traditional mechanical hard drives do not have, making them widely used in consumer markets, data centers, and enterprise markets. [0003] One of the characteristics of flash memory particles is that different degrees of bit inversion will occur during the life cycle. In order to further improve the life of SSD disks, storage manufacturers will pa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F11/10G11C29/42
CPCG06F11/1004G11C29/42
Inventor 廖莎王荣生鲍慧强沈海锋董服洋
Owner 杭州阿姆科技有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com