Check patentability & draft patents in minutes with Patsnap Eureka AI!

System memory release method and device and storage medium

A technology of memory release and system memory, applied in the field of memory management, which can solve the problems of inability to clean up memory, unable to meet user needs, affecting user experience, etc.

Pending Publication Date: 2020-05-29
SHENZHEN TCL NEW-TECH CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in the existing technology, the current memory release scheme can only be triggered by the process itself to release the memory actively, and when the process is not actively triggered, memory cleaning cannot be performed, which affects the user experience and cannot meet user needs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • System memory release method and device and storage medium
  • System memory release method and device and storage medium

Examples

Experimental program
Comparison scheme
Effect test

no. 4 example

[0083] Further, based on the first embodiment of the system memory release method of the present invention, a fourth embodiment of the system memory release method of the present invention is proposed. In this embodiment, step S20 further includes:

[0084] Step S220, generating a corresponding command instruction according to the memory release signal;

[0085] Step S230, sending the command instruction to a process running in the system, so that the process performs memory release according to the command instruction.

[0086] In this embodiment, the instruction corresponding to the memory release signal is set in the script data, and the signal identifier corresponding to the memory release signal and the corresponding instruction are sent to the process running in the system. After receiving the signal identifier, the process searches for the corresponding release signal. When the corresponding release signal is found, the corresponding instruction is executed, that is, th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a system memory release method. The method comprises the steps that a system memory value is acquired, If the system memory value is smaller than a preset threshold value, a corresponding memory release signal is generated; and sending the memory release signal to a process running in a system, so that the process performs memory release according to the memory release signal. The invention further discloses a system memory release device and a computer readable storage medium. According to the invention, the system can actively trigger the running process to release the memory.

Description

technical field [0001] The invention relates to the technical field of memory management, in particular to a system memory release method, device and computer-readable storage medium. Background technique [0002] At present, with the development of smart devices, end users have an increasing demand for memory, operating systems are becoming larger and larger, and applications require more memory for storage and corresponding operations than before. Therefore, timely Release system memory to meet the resource requirements of the foreground process. [0003] However, in the prior art, the current memory release scheme can only be triggered by the process itself to release the memory actively, and when the process is not actively triggered, memory cleaning cannot be performed, which affects the user experience and cannot meet user needs. Contents of the invention [0004] The main purpose of the present invention is to provide a system memory release method, device and comp...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F9/50
CPCG06F9/5016G06F9/5022
Inventor 韩瑞峰
Owner SHENZHEN TCL NEW-TECH CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com