Unlock instant, AI-driven research and patent intelligence for your innovation.

Interconnect structure of three-dimensional memory device

A storage device, three-dimensional technology, applied in semiconductor devices, electrical solid state devices, semiconductor/solid state device manufacturing, etc.

Active Publication Date: 2021-05-14
YANGTZE MEMORY TECH CO LTD
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the feature size of memory cells approaches the lower limit, planar processes and fabrication techniques become challenging and expensive
As a result, the storage density of planar memory cells approaches the upper limit

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Interconnect structure of three-dimensional memory device
  • Interconnect structure of three-dimensional memory device
  • Interconnect structure of three-dimensional memory device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] While specific configurations and arrangements are discussed, it should be understood that this is done for illustration purposes only. A person skilled in the relevant art will recognize that other configurations and arrangements may be used without departing from the spirit and scope of the present disclosure. It will be apparent to those skilled in the relevant art that the present disclosure may also be used in various other applications.

[0015] It should be noted that references in the specification to "one embodiment," "an embodiment," "exemplary embodiment," "some embodiments," etc. indicate that the described embodiments may include a particular feature, structure, or characteristic. , but each embodiment may not necessarily include the specific feature, structure or characteristic. Moreover, such phrases are not necessarily referring to the same embodiment. Furthermore, when a particular feature, structure or characteristic is described in conjunction with ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Embodiments of 3D memory devices and methods for forming 3D memory devices are disclosed. In one example, a 3D memory device includes a substrate, a memory stack layer, a channel structure, a channel local contact, a slit structure, and a step local contact. The memory stack includes alternating conductive and dielectric layers over a substrate. The channel structure extends vertically through the memory stack layers. A channel local contact is over and in contact with the channel structure. The slot structure extends vertically through the memory stack layers. The stepped local contact is located above and in contact with one of the conductive layers at the stepped structure on the edge of the memory stack layer. The upper ends of the trench local contacts, the slot structure and the step local contacts are flush with each other.

Description

technical field [0001] Embodiments of the present disclosure relate to three-dimensional (3D) memory devices and methods of manufacturing the same. Background technique [0002] Planar memory cells are scaled to smaller sizes by improving process technology, circuit design, programming algorithms, and manufacturing processes. However, as the feature size of memory cells approaches the lower limit, planar processes and fabrication techniques become challenging and expensive. As a result, the storage density of planar memory cells approaches the upper limit. [0003] 3D memory architectures can address density limitations in planar memory cells. A 3D memory architecture includes a memory array and peripheral devices for controlling signals to and from the memory array. Contents of the invention [0004] Embodiments of 3D memory devices and methods for forming 3D memory devices are disclosed herein. [0005] In one example, a 3D memory device includes a substrate, a memor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/535H01L23/48H01L27/11563H01L27/11578H10B43/27H10B43/50H10B41/27H10B41/35H10B43/00H10B43/10H10B43/20H10B43/35H10B43/40
CPCH01L23/535H01L23/481H10B43/00H10B43/20H10B43/50H10B43/27H10B43/35H10B43/10H10B43/40H01L21/76805H01L21/76816H01L21/76877H01L21/76895H01L23/5226H01L23/5283H10B41/27H10B41/35
Inventor 张坤宋豪杰鲍琨夏志良
Owner YANGTZE MEMORY TECH CO LTD