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A kind of c for photoanode x n y /bivo 4 Materials and their preparation methods and applications

A photoanode and photoelectrode technology, which is applied in the field of photoanode material preparation, can solve the problems such as the inability to form an interface, and achieve the effects of low cost, complicated preparation, and simple preparation method

Active Publication Date: 2021-11-16
CHINA ACADEMY OF SPACE TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, carbon nitride-like (C x N y ) related reports on bismuth vanadate modification, but most of them are based on physical mixing method, C x N y with BiVO 4 An effective interface cannot be formed between them, so the performance improvement is limited

Method used

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  • A kind of c for photoanode <sub>x</sub> n <sub>y</sub> /bivo <sub>4</sub> Materials and their preparation methods and applications
  • A kind of c for photoanode <sub>x</sub> n <sub>y</sub> /bivo <sub>4</sub> Materials and their preparation methods and applications
  • A kind of c for photoanode <sub>x</sub> n <sub>y</sub> /bivo <sub>4</sub> Materials and their preparation methods and applications

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Experimental program
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preparation example Construction

[0036] C proposed by the present invention x N y / BiVO 4 A method for preparing a photoanode, comprising the steps of:

[0037] (1) Synthesis of bulk carbon nitride (BCN);

[0038] The method of synthesizing bulk carbon nitride (BCN) is: heating and calcining the mixture of dicyandiamide and urea in the air atmosphere of a tube furnace. Raise the temperature to 300°C, then raise the temperature to 500°C at a rate of 1-4°C / min, then raise the temperature to 550°C at a rate of 1-3°C / min, keep it warm for 2-6 hours, and finally The cooling rate of 1-7°C / min reduces the temperature to 30°C, and the molar ratio of dicyandiamide to urea is 1-4:1;

[0039] (2) Synthesis of carbon nitride hydrogel (CNH);

[0040] The method for synthesizing carbon nitride hydrogel (CNH) is: disperse the bulk carbon nitride (BCN) prepared in step (1) in deionized water, then carry out hydrothermal reaction in the reactor, and the hydrothermal reaction temperature is 150 -250°C, the hydrothermal r...

Embodiment 1

[0058] Embodiment 1, preparation C x N y / BiVO 4 photoanodic method

[0059] (1) Synthesis of bulk carbon nitride (BCN): the mixture of dicyandiamide and urea (4:1 molar ratio) is heated in the air atmosphere of a tube furnace, and the temperature program for calcination is as follows: 30-300 ° C (8 ℃ / min); 300-500℃(2℃ / min); 500-550℃(1℃ / min); 550-550℃(4h); 550-30℃(5℃ / min);

[0060] (2) Synthesis of carbon nitride hydrogel (CNH): 0.5 g of BCN was dispersed in 20 mL of deionized water. Then it was transferred to a 100mL reactor for hydrothermal reaction and kept at 180°C for 5h to obtain a suspension.

[0061] (3) Nanoporous BiVO 4 Electrode synthesis: Dissolve 20mmol KI in 50mL deionized water and stir for 15min, then add HNO 3 Adjust the pH to 1.7. After stirring for 15min, add 2mmol Bi(NO 3 ) 3 ·5H 2 O, and then stirred for 15min to form a plating solution. This solution was mixed with 20 mL of absolute ethanol containing 4.6 mmol p-benzoquinone and stirred vigorou...

Embodiment 2

[0064] Embodiment 2, preparation C x N y / BiVO 4 photoanodic method

[0065] (1) Synthesis of bulk carbon nitride (BCN): the mixture of dicyandiamide and urea (4:1 molar ratio) is heated in the air atmosphere of a tube furnace, and the temperature program for calcination is as follows: 30-300 ° C (8 ℃ / min); 300-500℃(2℃ / min); 500-550℃(1℃ / min); 550-550℃(4h); 550-30℃(5℃ / min);

[0066] (2) Synthesis of carbon nitride hydrogel (CNH): 0.5 g of BCN was dispersed in 20 mL of deionized water. Then it was transferred to a 100mL reactor for hydrothermal reaction and kept at 180°C for 5h to obtain a suspension.

[0067] (3) Nanoporous BiVO 4 Electrode synthesis: Dissolve 20mmol KI in 50mL deionized water and stir for 15min, then add HNO 3 Adjust the pH to 1.7. After stirring for 15min, add 2mmol Bi(NO 3 ) 3 ·5H 2 O, and then stirred for 15min to form a plating solution. This solution was mixed with 20 mL of absolute ethanol containing 4.6 mmol p-benzoquinone and stirred vigorou...

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Abstract

The present invention relates to a C for photoanode x N y / BiVO 4 The material and its preparation method and application belong to the technical field of photoanode material preparation. By calcining a mixture of dicyandiamide and thiourea in a muffle furnace to obtain bulk carbon nitride, and then dispersing it in deionized water and transferring it to a hydrothermal kettle at a certain temperature for a certain period of time, the carbon nitride hydrogel is obtained. glue, and then prepared nanoporous BiVO by electrochemical deposition and subsequent annealing treatment 4 electrode, the carbon nitride hydrogel was instilled on the BiVO 4 C x N y / BiVO 4 Photoanode. C of the present invention x N y / BiVO 4 photoelectrode, a proper interfacial charge distribution is beneficial for C x N y / BiVO 4 The photogenerated carriers in the interfacial region are separated, thereby reducing the recombination of electron-hole pairs.

Description

technical field [0001] The present invention relates to a C for photoanode x N y / BiVO 4 The material and its preparation method and application belong to the technical field of photoanode material preparation. Background technique [0002] Bismuth vanadate (BiVO 4 ) is an n-type semiconductor with a bandgap of 2.4eV, which has the advantages of suitable bandgap, high activity, and low cost, and has been considered as a promising photoanode material in recent years. However, most reported BiVO 4 The photocurrent density is much lower than its theoretical value (7.5 mA / cm at AM 1.5G 2 ), which have problems such as poor separation and transport of photogenerated carriers, severe surface recombination, and slow water oxidation kinetics. [0003] Combining with other semiconductors is an effective way to improve the performance of bismuth vanadate. At present, carbon nitride (C x N y ) related reports on bismuth vanadate modification, but most of them are based on phys...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25B1/04C25B1/55C25B11/091C25B11/053G01N27/30G01N27/48
CPCC25B1/04C25D9/04C25B1/55C25B11/069G01N27/305G01N27/48Y02E60/36
Inventor 姜文君王宇宏姚伟刘再伦刘喆
Owner CHINA ACADEMY OF SPACE TECHNOLOGY
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