A kind of nand flash memory error rate prediction method and system

A prediction method and error rate technology, applied in the directions of error detection/correction, redundant code error detection, response error generation, etc. Effect

Active Publication Date: 2021-07-27
HUAZHONG UNIV OF SCI & TECH
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Problems solved by technology

In general, due to the dependence on specific feature quantities and specific execution algorithms, this method cannot guarantee the accuracy of flash life prediction, nor can it provide a reliable analysis basis for the security of data stored in NAND flash memory

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  • A kind of nand flash memory error rate prediction method and system
  • A kind of nand flash memory error rate prediction method and system
  • A kind of nand flash memory error rate prediction method and system

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Embodiment Construction

[0036]In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0037] In the present invention, the terms "first", "second" and the like (if any) in the present invention and drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence.

[0038] In order to realize the prediction of the original bit error rate in the NAND flash memory, guarantee data storage security, the NAND flash memory error rate...

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Abstract

The invention discloses a NAND flash memory error rate prediction method and system, belonging to the field of computer storage, comprising: obtaining M early interference features from historical data of NAND flash memory, and the original bit error rate corresponding to each early interference feature, and Pre-interference features and their corresponding original bit error rates are used as a prediction sample to obtain M prediction samples; the prediction samples are input into the trained error rate prediction model to predict the original bit error codes corresponding to N post-interference features Among them, the interference feature is the feature or feature combination that affects the original bit error rate of NAND flash memory; the error rate prediction model is a multi-input multi-output model, which is used to predict the later interference feature according to the previous interference feature and the corresponding original bit error rate The corresponding raw bit error rate. The invention can predict the error rate of the NAND flash memory, predict the change trend of the error rate of the NAND flash memory, and provide quantitative and reliable judgment basis for data storage safety.

Description

technical field [0001] The invention belongs to the field of computer storage, and more particularly relates to a method and system for predicting the error rate of a NAND flash memory. Background technique [0002] In recent years, NAND flash memory has gradually become the mainstream storage medium due to its fast speed, high storage density, and good shock resistance, and is widely used in many systems such as embedded systems, personal computers, and high-performance servers. However, with the reduction in the size of the feature process, the growth of multi-level storage, and the increase in the number of three-dimensional stacked layers, various interferences pose a huge challenge to the reliability of NAND flash memory. [0003] During the use of NAND flash memory, the programming / erasing (Program / Erase, P / E) operation will cause wear to the oxide layer; as the wear increases, reading errors will occur when the written data is read. And when the written data is left ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F11/10
CPCG06F11/1048G06F11/1068
Inventor 吴非刘伟华朱奥刘嘉宏谢长生
Owner HUAZHONG UNIV OF SCI & TECH
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