Storage device error correction method and device

Abstract

The invention discloses a storage device error correction method and error correction device, which do not need to set a plurality of sets of codes for error correction mechanism behaviors of different storage devices, and do not need to distinguish error correction mechanism behaviors of various storage devices in one set of codes by using macros, so the coding work is reduced, and the later maintenance cost is reduced. The method comprises the steps: obtaining error correction mechanism format information of the storage device when a data reading error occurs in the storage device; setting error correction mechanism standard format information according to the error correction mechanism format information, wherein the error correction mechanism standard format information comprises headinformation and data information; analyzing the header information of the error correction mechanism standard format information to obtain a command parameter, a register parameter and a data parameter required for executing an error correction mechanism behavior; executing an error correction mechanism behavior according to the command parameter, the register parameter and the data parameter, andreading error correction mechanism behavior data from the data information; and judging whether the error correction mechanism behavior is successful or not according to the error correction mechanism behavior data.

Description

technical field [0001] The invention relates to the field of data processing, in particular to an error correction method and an error correction device for a storage device. Background technique [0002] As a storage medium, NAND FLASH can be seen everywhere in the field of life. With the improvement of technology, NAND FLASH has also developed from single-level cell (Single-Level Cell, SLC) to multi-layer cell (XLC). As the capacity increases, the stability is deteriorating, and bit flipping is increasing, which requires a relatively strong error correction mechanism. NAND FLASH is affected by conditions such as temperature and storage time, which will cause the bit flip to increase suddenly, which will make the error correction mechanism invalid and fail to read data. NAND FLASH manufacturers provide a mechanism to adjust the judgment voltage, which is an error correction mechanism. First, the judgment voltage can be moved, and then read again. The direction and magnit...

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Problems solved by technology

[0004] However, the first method needs to write multiple sets of codes and requires a lot of manpower, resulting in a waste of time and manpower, and the cost of later maintenance is too high; while the second method uses macros to distinguish a set of codes, which is not conducive to reading and will affect maintenance. cause confusion, may cause confusion, and is also not conducive to later maintenance

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