A kind of wave-absorbing material with three-layer hollow structure and its preparation method and application

A technology of wave absorbing material and hollow structure, applied in the field of wave absorbing material, can solve the problem of strong wave absorbing performance, and achieve the effect of wide wave absorbing frequency band, light weight and large hollow volume

Active Publication Date: 2021-04-06
BEIJING INSTITUTE OF TECHNOLOGYGY
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the traditionally used wave-absorbing materials are difficult to meet the requirements of strong wave-absorbing performance, wide effective wave-absorbing frequency band, light weight, and thin coating thickness. Electromagnetic absorbing materials have very important significance and practical needs for civilian electronic products and military equipment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of wave-absorbing material with three-layer hollow structure and its preparation method and application
  • A kind of wave-absorbing material with three-layer hollow structure and its preparation method and application
  • A kind of wave-absorbing material with three-layer hollow structure and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0036] The present invention provides a preparation method of three-layer hollow nanoparticles. The material is applied in the fields of wave absorption, energy and catalysis. The preparation method includes the following steps:

[0037] (1) reducing the ferrous sulfate reaction solution to obtain iron particles;

[0038] (2) plating a layer of metal on the surface of the iron particles to obtain the iron particles covered by the metal;

[0039] (3) using dilute hydrochloric acid to corrode the iron particles covered by the metal to obtain hollow metal nanoparticles;

[0040] (4) Coating a layer of metal on the hollow metal nanoparticles to obtain two layers of metal hollow nanoparticles.

[0041] (5) The two-layer metal hollow nanoparticles are hydrothermally reacted to obtain three-layer hollow nanoparticles

[0042] The three-layer hollow nanoparticles provided by the present invention are respectively magnetic metal layer, intermetallic compound layer, and metal oxide la...

Embodiment

[0072] Air@Co@Co 3 sn 2 @SnO 2 Three layers of hollow nanoparticles:

[0073] aUsing NaBH 4 Reduced FeSO 4 , to get Fe particles.

[0074] Preparation of reaction solution and reducing solution

[0075] Reaction solution: FeSO 4 ·7H 2 O, 0.1mol / L×100ml, used after preparation Medium-speed qualitative filter paper filtration.

[0076] Reducing solution: NaBH 4 , 0.5mol / L×40ml+60ml NH 3 ·H 2 O, the two are fully mixed before use.

[0077] Use a constant current pump to drop the mixed reducing solution into the reaction solution and keep stirring, the titration rate is 3ml / min; the water bath is heated at a temperature of 40°C; Fe particles with a particle size of 280-330nm are generated.

[0078] The Fe particles were ultrasonically cleaned three times with deionized water, each time for one minute, to obtain Fe particles.

[0079] b electroless cobalt plating:

[0080] Reaction solution: CoSO 4 ·7H 2 O 0.027mol / L, KNaC 4 O6H 4 0.021mol / L, a total of 300ml o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

The invention relates to a wave-absorbing material with a three-layer hollow structure, a preparation method and application thereof, and belongs to the technical field of wave-absorbing materials. The three-layer hollow structure wave-absorbing material of the present invention has various loss modes such as magnetic loss, resistance loss, and dielectric loss, which makes the wave-absorbing frequency band of the particle wider and better in wave-absorbing performance. The multi-layer structure and interlayer walls in the three-layer hollow structure wave-absorbing material of the present invention improve the wave-absorbing performance of the three-layer hollow nano-particles.

Description

technical field [0001] The invention relates to a wave-absorbing material with a three-layer hollow structure, a preparation method and application thereof, and belongs to the technical field of wave-absorbing materials. Background technique [0002] With the widespread use of a large number of electronic products and electronic equipment, electromagnetic wave radiation pollution has become a new environmental pollution. In order to reduce the electromagnetic radiation pollution caused by electronic devices and electronic equipment in use, it is necessary to use electromagnetic wave absorbing materials Protect it. In addition, in modern warfare, in order to prevent our targets from being detected by the enemy's radar or minimize the effective detection distance of the opponent's radar, and improve the penetration capability and survivability of the weapon system, high-performance devices that can attenuate and absorb electromagnetic waves are used. The protection of weapons...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C09K3/00
CPCC09K3/00
Inventor 赵修臣侯壮壮谭成文温国胜李红
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap