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Bulk-acoustic wave resonator

A technology of bulk acoustic wave resonators and resonators, applied in impedance networks, electrical components, etc.

Pending Publication Date: 2020-08-25
SAMSUNG ELECTRO MECHANICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] A typical acoustic resonator may operate in a frequency band of 2GHz to 3GHz for 4G, but compared to a typical acoustic resonator, for 5G in a frequency band of less than 6GHz (ie, sub-6GHz, eg, 4GHz to 6GHz) To operate under communications, it may be necessary to transmit high power

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Embodiment Construction

[0035] The following detailed description is provided to assist the reader in gaining an overall understanding of the methods, devices and / or systems described herein. However, various changes, modifications, and equivalents of the methods, apparatus, and / or systems described herein will be apparent upon understanding the disclosure of the present application. For example, the order of operations described herein are examples only, and are not limited to the order set forth herein, but, except for operations that must occur in a particular order, can be made that will be apparent after understanding the disclosure of the present application. change. In addition, descriptions of well-known features may be omitted for increased clarity and conciseness.

[0036] The features described herein can be implemented in many different forms and should not be construed as limited to the examples described herein. Rather, the examples described herein have been provided merely to illust...

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Abstract

A bulk-acoustic wave resonator is provided. The bulk-acoustic wave resonator comprises a substrate, a resonant portion comprising a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate, and further comprising a center portion and an extension portion that is disposed along a periphery of the center portion, and an insertion layer that is disposed inthe extension portion between the first electrode and the piezoelectric layer, and the insertion layer is formed of an aluminum alloy containing scandium (Sc).

Description

[0001] This application claims the benefit of priority from Korean Patent Application No. 10-2019-0017637 filed with the Korean Intellectual Property Office on February 15, 2019, the entire disclosure of which is incorporated by reference for all purposes here. technical field [0002] The following description relates to a bulk acoustic wave resonator. Background technique [0003] As wireless communication devices become more compact, the demand for miniaturization of high-frequency components increases. As an example, a filter in the form of a bulk acoustic wave (BAW) resonator using semiconductor thin film wafer fabrication technology is provided. [0004] A bulk acoustic wave (BAW) resonator is a filter realized using a thin film device that induces resonance using piezoelectric properties obtained by a piezoelectric dielectric material deposited on a silicon wafer as a semiconductor substrate. [0005] Recently, interest in 5G communication has increased, and technol...

Claims

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Application Information

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IPC IPC(8): H03H9/17
CPCH03H9/17H03H9/174H03H9/02118H03H9/02102H03H3/04H03H2003/0407H03H9/176H03H9/02031
Inventor 李泰京庆济弘金成善孙晋淑申兰姬李华善
Owner SAMSUNG ELECTRO MECHANICS CO LTD
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