Check patentability & draft patents in minutes with Patsnap Eureka AI!

Data reading method and device for nonvolatile memory, and medium

一种非易失性、数据读出的技术，应用在存储器领域，能够解决存储数据内容易出现误差、数据误差等问题，达到保证速度、确保准确度的效果

Active Publication Date: 2020-09-22
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the value difference is less than a certain value, that is, less than the standard judgment margin, the judgment of the stored data content is prone to errors, and then the data read from the memory has errors.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Data reading method and device for nonvolatile memory, and medium
  • Data reading method and device for nonvolatile memory, and medium
  • Data reading method and device for nonvolatile memory, and medium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] When reading data from the memory, the memory readout circuit applies a voltage or current to the storage unit in the memory, and compares the value range of the current or voltage output by the storage unit with the value of the reference value, thereby judging the storage in the storage unit. data. The greater the difference between the value range of the current or voltage output by the storage unit and the reference value, the more accurate and fast the determination of the stored data content is. However, the value range of the current or voltage output by the same storage unit will vary. After multiple times of erasing and writing the non-volatile memory, the value gap between each value in the value range of the current or voltage output by the memory unit and the reference value may become smaller and smaller. When the value difference is less than a certain value, that is, less than the standard judgment margin, errors are likely to occur in the judgment of th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a data reading method and device for a nonvolatile memory and a medium, and the method comprises the steps: obtaining address information, decoding the address information, anddetermining the address of a corresponding storage unit; if the address of the storage unit is in the selected area, adjusting the first judgment reference value to obtain a second judgment referencevalue; loading read-out current to the storage unit, and obtaining judgment current output by the storage unit; and comparing the value range of the judgment current output by the storage unit with the second judgment reference value, and reading the data content stored in the storage unit. By adopting the method, the data reading speed is ensured while the accuracy of the data read by the memoryis ensured.

Description

technical field [0001] The invention relates to the field of memory, in particular to a data readout method, device and medium of a nonvolatile memory. Background technique [0002] Non-volatile memory refers to memory in which stored data will not be lost when the computer is turned off or suddenly or accidentally turned off. [0003] When reading data from the memory, the memory readout circuit applies a voltage or current to the storage unit (Cell) in the memory, and compares the value range of the current or voltage output by the storage unit with the value of the reference value, thereby judging the storage unit stored data within. The greater the difference between the value range of the current or voltage output by the storage unit and the reference value, the more accurate and fast the determination of the stored data content is. However, the value range of the current or voltage output by the same storage unit will vary. After repeated erasing and writing (cyclin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/26G11C16/08
CPCG11C16/26G11C16/08G11C29/006G11C7/062G11C29/028G11C7/1069G11C8/10G06F3/0659G06F3/0679G06F3/0604
Inventor 王韬郑晓
Owner SEMICON MFG INT (SHANGHAI) CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com