High-resolution negative photoresist and preparation method thereof
A negative photoresist, high-resolution technology, applied in the field of optical materials, can solve the problems of reducing the adhesion between the film-forming resin and the silicon wafer, difficult to ensure the solubility of the film-forming resin, and unfavorable resolution of lithography patterns. Achieve the effect of improving adhesion, reducing the probability of swelling, and improving resolution
Active Publication Date: 2020-10-02
广东绿色大地化工有限公司
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AI Technical Summary
Problems solved by technology
[0005]
Aiming at the problems existing in the prior art, the technical problem to be solved in the present invention is: the alkali-soluble negative photoresist of acrylic acid modified epoxy resin uses acrylic acid and acrylic acid as the component for introducing double bonds, whenever a double bond is introduced bond, it will consume a carboxyl group, it is difficult to ensure the solubility of the film-forming resin in the developer, and it is easy to cause high LER and low resolution; the film-forming resin contains more epoxy functional groups, which greatly reduces It affects the adhesion between film-forming resin and silicon wafer, which is very unfavorable to the resolution of photolithographic patterns.
Method used
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Embodiment 1
[0027] Negative photoresist, in parts by weight, includes the following components:
[0028]
Embodiment 2
[0030] Negative photoresist, in parts by weight, includes the following components:
[0031]
Embodiment 3
[0033] Negative photoresist, in parts by weight, includes the following components:
[0034]
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The invention relates to the field of optical materials, in particular to a high-resolution negative photoresist. According to the acrylic acid modified epoxy resin which is an alkali-soluble negativephotoresist, acrylic acid is used as a component for introducing double bonds, and a carboxyl group is consumed every time one double bond is introduced, so that the solubility of film-forming resinin a developing solution is difficult to ensure, and higher LER and lower resolution are easily caused; and the film-forming resin contains more epoxy functional groups, so that the adhesive force between the film-forming resin and a silicon wafer is greatly reduced, and the resolution of a photoetching pattern is very unfavorable. For the problems above, the invention provides the high-resolution negative photoresist; rich hydroxyl functional groups and rigid structures are introduced into a side chain of photosensitive resin, and through compounding of two reactive diluents, the photosensitive resin obtains proper crosslinking density, so that the adhesive force of the photosensitive resin on a silicon wafer is effectively improved, the resolution of a photoetching image is greatly improved, and the photoetching image has small LER.
Description
technical field [0001] The invention relates to the field of optical materials, in particular to a high-resolution negative photoresist. Background technique [0002] Photoresist refers to the photosensitive mixed liquid whose solubility in the developer is changed by the irradiation or radiation of the ultraviolet light exposure light source. It is a key material in the integrated circuit industry chain and is mainly used in the fine patterns of microelectronics and semiconductor discrete devices. processing. [0003] Photoresist is composed of film-forming resin, photosensitizer, additives and solvents, among which film-forming resin is a key component, which can undergo photochemical reactions and determine the sensitivity, resolution and solubility of photoresist. [0004] The alkali-soluble negative type photoresist of commercialization is mainly the epoxy resin of acrylic acid modification, but the brittleness of this type of resin is big, causes line edge roughness e...
Claims
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IPC IPC(8): G03F7/038G03F7/027C08F220/28C08F220/18C08F212/14C08F222/08
CPCG03F7/038G03F7/027C08F220/282C08F220/1804C08F212/24C08F222/08
Inventor肖洪健谢秋梅罗舜菁
Owner广东绿色大地化工有限公司



