Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Dynamic carrier waveform modification to avoid concurrent turn-on/turn-off switching

A carrier wave and waveform technology, which is applied in the control field of power semiconductor devices and can solve problems such as low on-state voltage drop

Pending Publication Date: 2020-10-27
FORD GLOBAL TECH LLC
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It may also have a low on-state voltage drop in operating mode, like a BJT

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Dynamic carrier waveform modification to avoid concurrent turn-on/turn-off switching
  • Dynamic carrier waveform modification to avoid concurrent turn-on/turn-off switching
  • Dynamic carrier waveform modification to avoid concurrent turn-on/turn-off switching

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] Various embodiments of the disclosure are described herein. However, the disclosed embodiments are exemplary only, and other embodiments may take various and alternative forms not expressly shown or described. The figures are not necessarily to scale; some features may be exaggerated or minimized to show details of particular components. Therefore, specific structural and functional details disclosed herein are not to be interpreted as limiting, but merely as a representative basis for teaching one skilled in the art to variously employ the present invention. As will be understood by persons of ordinary skill in the art, various features shown and described with reference to any one of the figures may be combined with features shown in one or more other figures to produce or described examples. The combinations of features shown provide representative embodiments of typical applications. However, various combinations and modifications of the features consistent with ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a dynamic carrier waveform modification to avoid concurrent turn-on / turn-off switching. A power electronics switching system has a power converter including switching elements respectively disposed in parallel paths. The system also has a controller that outputs switching commands for the switching elements derived from carrier waveforms and reference waveforms correspondingto the switching elements, and generates a shape for one of the carrier waveforms according to a difference in magnitudes between the reference waveforms such that the shape is of a first type responsive to the difference being greater than a first threshold and is of a second type different than the first type responsive to the difference being less than a second threshold.

Description

technical field [0001] The present disclosure relates to control of power semiconductor devices. Background technique [0002] Power semiconductors are used as switches or rectifiers in certain power electronic devices, such as switched-mode power supplies. Power semiconductors are also known as power devices, or when used in integrated circuits, power integrated circuits (ICs). Power semiconductors are typically used in commutation mode (which is either on or off) and have designs optimized for such use. Power semiconductors are used in systems that deliver tens of milliwatts (eg, headphone amplifiers) as well as systems that deliver gigawatts (eg, high-voltage direct current transmission lines). [0003] Certain metal-oxide-semiconductor field-effect transistors (MOSFETs), a type of power semiconductor, are depletion-channel devices: voltage rather than current may be required to establish a conduction path from drain to source. At low frequencies, this reduces gate cur...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/088H02P27/06
CPCH02M1/088H02P27/06H02M1/32H02M1/38H02M3/155H02M7/219H02P5/74H02P27/08H02M1/007H02M1/008H02M3/158H02M7/48H02P27/14
Inventor 斯里坎珊·斯里达兰菊池润
Owner FORD GLOBAL TECH LLC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products