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A detection method and detection system for the blocking ability of a photoresist layer

A detection method and technology of photoresist layer, applied in semiconductor/solid state device testing/measurement, electrical components, circuits, etc., can solve the problem of inability to judge the use of photoresist layer

Active Publication Date: 2020-12-22
南京晶驱集成电路有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this prior art, if there are defects on the silicon wafer, it is impossible to judge whether the photoresist layer can be used

Method used

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  • A detection method and detection system for the blocking ability of a photoresist layer
  • A detection method and detection system for the blocking ability of a photoresist layer
  • A detection method and detection system for the blocking ability of a photoresist layer

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Embodiment Construction

[0053] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0054] It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual impleme...

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Abstract

The invention provides a method and a system for detecting the blocking capability of a photoresist layer, and the method comprises the steps: providing a first wafer and a second wafer which are wafers of a first doping type; carrying out the first doping of the first wafer and the second wafer, so as to form a first doped region in the first wafer and the second wafer; annealing the first waferand the second wafer, measuring the resistance of the first wafer, and defining the resistance as a first resistance; forming a photoresist layer on the second wafer; performing second doping on the first doped region of the second wafer through the photoresist layer; and removing the photoresist layer, measuring the resistance of the second wafer, and defining the resistance as a second resistance. The method for detecting the blocking capability of the photoresist layer provided by the invention can be used for quickly detecting the blocking capability of the photoresist layer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a detection method and detection system for the blocking ability of a photoresist layer. Background technique [0002] The ion implantation process is a doping technology for semiconductor materials, which has the advantages of low temperature doping, easy masking, precise dose control, and high uniformity. It is used in multiple process steps such as source and drain doping, channel doping, Lightly doped drain doping, etc., make the manufactured semiconductor devices have the characteristics of fast speed, low power consumption, good stability, and high yield. Since the required energy dose and other conditions are different in different ion implantation processes, and the designated area is doped during ion implantation, other positions need to be masked with barrier layers such as photoresist. Photoresist barrier layers with different thicknesses have different blockin...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
CPCH01L22/12H01L22/14
Inventor 温育杰程挚李昌达方晓宇郭宜婷
Owner 南京晶驱集成电路有限公司