Threshold voltage adjusting device and threshold voltage adjusting method
A threshold voltage and adjustment device technology, which is applied in the field of memory, can solve the problem of low calculation accuracy of integrated storage and calculation circuits, and achieve the effect of improving data calculation accuracy and reducing threshold voltage deviation
Active Publication Date: 2020-12-01
珠海博雅科技股份有限公司
View PDF6 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] In order to overcome the problem in the related art that there is a deviation in the threshold voltage of the memory cell, which leads to the low calculation accuracy of the storage and calculation integrated circuit, the embodiment of the present invention provides a threshold voltage Voltage adjustment device and threshold voltage adjustment method
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0060] The present invention is described below based on examples, but the present invention is not limited to these examples. In the following detailed description of the invention, some specific details are set forth in detail. The present invention can be fully understood by those skilled in the art without the description of these detailed parts. In order to avoid obscuring the essence of the present invention, well-known methods, procedures, and flow charts are not described in detail. Additionally, the drawings are not necessarily drawn to scale.
[0061] figure 1 is a schematic structural diagram of a threshold voltage adjusting device according to an embodiment of the present invention. Such as figure 1 As shown, the threshold voltage adjusting device includes: a test unit 100 , a table look-up unit 200 , a control unit 300 and an integrated storage and calculation circuit 400 . The integrated storage and calculation circuit 400 includes a storage array 440 compos...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The embodiment of the invention discloses a threshold voltage adjusting device and a threshold voltage adjusting method, and relates to the technical field of memories. The threshold voltage adjustingdevice comprises a test unit used for providing a read operation control signal to a storage and calculation integrated circuit according to address information so as to read output current values ofa plurality of storage units of a threshold voltage to be adjusted, and calculating to obtain a minimum difference value between the output current values and a target current value; a table look-upunit which is used for looking up an operation voltage value-time value table through an algorithm according to the minimum difference value so as to obtain an optimal write operation voltage value and an optimal write operation time value; a control unit which is used for providing a write operation control signal according to the address information, the write operation voltage value and the write operation time value; and a storage and calculation integrated circuit which is used for executing a write operation on the plurality of storage units of which the threshold voltages are to be adjusted according to the write operation control signal so as to realize threshold voltage adjustment of the plurality of storage units. And the threshold voltage deviation of the storage unit in the storage integrated circuit is reduced.
Description
technical field [0001] The present invention relates to the technical field of memory, in particular to a threshold voltage adjusting device and a threshold voltage adjusting method. Background technique [0002] In the traditional von Neumann computing architecture, the memory and the processor are separated, and the two are connected through a data bus, and data processing needs to be transmitted back and forth between the memory and the processor. However, with the rise of big data applications, the transmission and processing of massive data makes the traditional von Neumann computing architecture face the dual challenges of bandwidth and power consumption, which are called storage wall and power consumption wall respectively. In order to solve these two problems, in recent years, inspired by the simultaneous memory and calculation of synapses in the human brain, the Processing-In-Memory (PIM) technology in computer architecture has begun to be widely studied. [0003] ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): G11C5/14G11C7/18G11C8/08G11C8/14
CPCG11C5/147G11C7/18G11C8/08G11C8/14
Inventor 安友伟万碧根马亮张登军刘大海
Owner 珠海博雅科技股份有限公司