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Stretchable light-emitting device based on AC electric field driving semiconductor pn junction and method thereof

A technology of alternating electric field and light-emitting devices, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as low luminous efficiency, poor tensile stability, and preparation processes that are not suitable for large-scale production. The effect of stable properties, low cost and good light output ability

Active Publication Date: 2021-11-02
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, no practical stretchable electroluminescent devices have been applied to the market so far, which is mainly limited by the following aspects: (1) low luminous efficiency; (2) poor stretching stability; (3) The preparation process is not suitable for large-scale production
In the experimental results reported so far, researchers have focused on solving different problems. There is no stretchable light-emitting device that can simultaneously have high efficiency and cyclic stretch stability, and the preparation process is suitable for mass production.

Method used

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  • Stretchable light-emitting device based on AC electric field driving semiconductor pn junction and method thereof
  • Stretchable light-emitting device based on AC electric field driving semiconductor pn junction and method thereof

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Experimental program
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Effect test

Embodiment 1

[0043] In this embodiment, a stretchable light-emitting device based on driving a semiconductor PN junction with an alternating electric field is provided, and the specific preparation steps are as follows:

[0044] Step 1: Preparation of Gallium Nitride Dispersion

[0045] Use an electronic balance to accurately weigh 500 mg of red light quantum dot fluorescent microspheres and about 5 mg of vertical blue light gallium nitride particles, and put them into a sample bottle filled with about 3 mL of toluene solvent. Stir with a constant temperature magnetic stirrer at room temperature for about 1 hour, disperse evenly, and transfer to a small petri dish. Weigh 1.5 g of CR-168A thermal gel with an electronic balance and add it to a small petri dish. After stirring on a constant temperature magnetic stirrer for about 1 hour, the toluene solvent evaporates continuously during this period to prepare a gallium nitride dispersion with moderate viscosity. After it is made, it needs to...

Embodiment 2

[0055] This embodiment provides a stretchable light-emitting device based on driving a semiconductor PN junction with an AC electric field, and its preparation process is consistent with that of Embodiment 1, except that the materials of the electrodes 120 and 220 at both ends are polyethylene with high conductivity. Dioxythiophene (PEDOT). Its step 1, step 2, step 4, step 5, step 6 are identical with embodiment 1, and the preparation of step 3 electrode is as follows:

[0056] Under the atmospheric environment, double parts were prepared by spin-coating polyethylenedioxythiophene with high conductivity on the stretchable substrate substrate as the stretchable electrode 120, and the other part was the electrode 220 on the upper cover of the light-emitting layer. The parameters of the spin coating are first low speed 500RPM, high speed 2000RPM, low speed for 3 seconds, high speed for 60 seconds, annealing at 100°C for 10 minutes.

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Abstract

The invention relates to a stretchable light-emitting device based on an AC electric field driving a semiconductor PN junction, comprising a first stretchable electrode substrate, a first stretchable electrode, a semiconductor PN junction light-emitting layer, and a second stretchable electrode substrate arranged in sequence from top to bottom. A stretchable electrode and a second stretchable electrode substrate. The invention can realize the light-emitting display of the stretchable light-emitting device, and can maintain good light output ability under the condition of stretching.

Description

technical field [0001] The invention relates to the field of light-emitting devices, in particular to a stretchable light-emitting device and a method for driving a semiconductor PN junction based on an alternating electric field. Background technique [0002] In recent years, with the rapid development of emerging fields such as wearable devices, smart electronic skin and robots, stretchable electronic devices have gradually entered people's field of vision. Compared with traditional electronic devices, the outstanding feature of stretchable electronic devices is that they can be stretched, bent or folded under the action of external force. It involves the disciplines of electronic devices, materials and engineering, and is a new multidisciplinary field. research direction. After just a few years of development, flexible and stretchable light-emitting devices have made great progress, including the development of a variety of different stretching methods, abundant stretchi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/56H01L51/00
CPCH10K77/111H10K50/00H10K50/805H10K71/00Y02E10/549Y02P70/50
Inventor 李福山郑鑫朱阳斌胡海龙田丰庆郭太良
Owner FUZHOU UNIV