Unlock instant, AI-driven research and patent intelligence for your innovation.

Apparatus and method of processing a substrate

A technology for processing substrates and substrates, used in gaseous chemical plating, coatings, electrical components, etc., and can solve problems such as cracks

Inactive Publication Date: 2020-12-18
SK HYNIX INC +1
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the contrary, when the reaction tube is rapidly cooled, cracks may be generated by by-products formed on the inner wall of the reaction tube during the substrate processing process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Apparatus and method of processing a substrate
  • Apparatus and method of processing a substrate
  • Apparatus and method of processing a substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] Various embodiments of the invention will be described in more detail with reference to the accompanying drawings. The drawings are schematic illustrations of various embodiments (and intermediate structures). As such, variations in construction and shape from the illustrations due, for example, to manufacturing techniques and / or tolerances are to be expected. Accordingly, the described embodiments should not be construed as limited to the specific configurations and shapes shown herein but may include deviations in configurations and shapes without departing from the spirit and scope of the present invention as defined by the appended claims .

[0019] The invention is described herein with reference to cross-section and / or plan illustrations of idealized embodiments of the invention. However, the embodiments of the present invention should not be construed as limiting the inventive concept. Although a few embodiments of the present invention will be shown and descr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
widthaaaaaaaaaa
Login to View More

Abstract

An apparatus for processing a substrate includes a reaction tube, a side cover, a heater, a first gas supplier, a second gas supplier and a controller. The reaction tube is configured to receive a substrate boat in which a plurality of the substrate is received to process the substrate. The side cover is configured to receive the reaction tube. The heater lines the interior of the side cover. Thefirst gas supplier is provided to an upper portion of the side cover to supply a cooling gas at a first supplying rate to a space between the side cover and the reaction tube. The second gas supplieris provided to a lower portion of the side cover to supply the cooling gas at a second supplying rate different from the first supplying rate to the space between the side cover and the reaction tube.The controller controls the reaction tube.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Application No. 10-2019-0071561 filed with the Korean Intellectual Property Office on June 17, 2019, the entire contents of which are incorporated herein by reference. technical field [0003] Various embodiments may relate generally to apparatus and methods for processing substrates, and more particularly, to apparatus and methods for processing substrates capable of controlling cooling rates and temperature uniformity in reaction tubes. Background technique [0004] A semiconductor manufacturing process may include the process of processing a substrate through a chemical vapor deposition (CVD) process to form layers on the substrate. The substrate processing process may include loading a substrate boat having a plurality of substrates into a reaction tube, and supplying a reaction gas into the reaction tube under vacuum. [0005] During the substrate processing process, t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44C23C16/52H01L21/67
CPCC23C16/4411C23C16/52H01L21/67011H01L21/67098H01L21/67017H01L21/67248H01L21/02271C23C16/44C23C16/46C23C16/4412C23C16/4583
Inventor 郑珉珍金泰焕姜民雄刘炫准姜盛皓朴松焕金甫宣李弘源赵柱铉晋龙铎
Owner SK HYNIX INC