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A Measurement Method of Interfacial State Response of Varistor Ceramics Based on Frequency-Domain Dielectric Response

A technology of varistor ceramics and dielectric response, which is applied in measuring devices, measuring electrical variables, measuring resistance/reactance/impedance, etc., and can solve the problem that the interface state response cannot disappear immediately

Active Publication Date: 2021-08-13
XI AN JIAOTONG UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, after the DC bias is removed, the interface state response cannot disappear immediately, and it takes a certain amount of time

Method used

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  • A Measurement Method of Interfacial State Response of Varistor Ceramics Based on Frequency-Domain Dielectric Response
  • A Measurement Method of Interfacial State Response of Varistor Ceramics Based on Frequency-Domain Dielectric Response
  • A Measurement Method of Interfacial State Response of Varistor Ceramics Based on Frequency-Domain Dielectric Response

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Embodiment 1

[0036] CaCu 3 Ti 4 o 12 (CCTO) ceramics as an example, the sample is pretreated at 50°C for 24 hours to release various stress histories inside the sample. With the help of liquid nitrogen cooling system, the temperature of the sample was lowered to -140°C, and the temperature was kept stable. First, set the DC bias voltage so that the electric field strength of the sample is 0V / mm and maintain it for 3min, then measure the frequency domain dielectric spectrum of the sample under an AC signal of 1V. Then the sample was heated to 30°C at a heating rate of 3°C / min, and the frequency-domain dielectric spectrum of the sample under AC small signal was measured every 0.2°C during the heating process. Next, cool the sample from 30°C to -140°C, apply a DC bias voltage across the sample so that the electric field strength of the sample is 40V / mm and keep it for 3min, then heat the sample at a heating rate of 3°C / min , the sample was heated from -140 °C to 30 °C, and the frequency d...

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Abstract

The invention discloses a method for measuring the interface state response of piezo-sensitive ceramics based on the frequency-domain dielectric response, which includes: 1) heating or cooling the sample to the initial test temperature; setting a DC bias voltage so that the electric field strength of the sample is 0V / mm and keep it for the first set time, remove the DC bias voltage, measure the frequency domain dielectric spectrum of the sample under the set AC signal, then increase the temperature according to the set heating rate, and measure the frequency domain of the sample continuously Dielectric spectrum until the sample temperature reaches the preset end test temperature to obtain the first frequency domain dielectric spectrum of the sample; 2) repeat step 1) to modulate the electric field intensity to n V / mm to obtain the second frequency domain of the sample domain dielectric spectrum; 3) subtracting the first frequency domain dielectric spectrum from the second frequency domain dielectric spectrum to obtain the interface state response curve of the varistor ceramic; wherein, n is smaller than the breakdown field strength of the sample. The test results of the invention can well characterize the characteristics of the interface state response of the sample, and are an effective method for testing the interface state response of back-to-back potential barriers.

Description

technical field [0001] The invention belongs to the field of semiconductor ceramics, in particular to a method for measuring the interface state response of pressure-sensitive ceramics based on frequency-domain dielectric response. Background technique [0002] Among many functional ceramic materials, the back-to-back Schottky barriers at the grain boundaries are the origin of their functionalization, which determines the short-term functional characteristics and stability of ceramic media. In general, this back-to-back Schottky barrier consists of two parts: negatively charged interface state defects at the grain boundaries and a depletion layer on the grain surface. The characterization detection of the defect response in the depletion layer is relatively mature, but there are still doubts about how to detect the response characteristics of the interface state defect structure. [0003] The characteristics of the dynamic response of the interface state are illustrated thr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R27/26
CPCG01R27/2623
Inventor 武康宁李建英王瑶侯宗克郭璊李盛涛
Owner XI AN JIAOTONG UNIV
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