Crystalline silicon cell capable of preventing edge electric leakage, and preparation method thereof

Abstract

The invention relates to the field of solar cell production. A crystalline silicon cell capable of preventing edge electric leakage is characterized in that a layer of 25-40 [mu]m high-temperature insulating film is arranged on the peripheral side of each cell piece of the crystalline silicon cell, and the high-temperature insulating film has stability at 1000 DEG C. A preparation method of the crystalline silicon cell capable of preventing edge electric leakage comprises the following steps: preparing the layer of 25-40 [mu]m high-temperature insulating film on the peripheral side of a silicon wafer before preparing positive and negative electrodes of a cell piece, and then preparing the positive and negative electrodes. According to the cell piece of the crystalline silicon cell designedby the invention, edge electric leakage caused by metal slurry in a silk-screen printing process is avoided by utilizing the high-temperature-resistant insulating film formed at the periphery, and meanwhile, the conversion efficiency of the battery is improved due to a larger aluminum back surface field area.

Description

technical field [0001] The invention relates to the field of solar cell production. Background technique [0002] In the screen printing process for the manufacture of crystalline silicon solar cells, since the electronic paste will inevitably contaminate the table paper, screen, table, track and fixture, it will more or less occur during the printing and transmission of silicon wafers. Contaminated by electronic paste, surface leakage current along the edge of the battery will be generated, which will affect the conversion efficiency, and seriously cause hot spots and leakage, which will affect the yield and reliability. In order to reduce edge leakage, usually the aluminum back field is 0.5mm-1mm away from the edge of the silicon wafer. If it is less than 0.5mm, once the printing is offset or the edge is stained during the printing process, the edge leakage current will be too large, causing the battery chip short circuit. Contents of the invention [0003] The technic...

AI Technical Summary

Problems solved by technology

[0002] In the screen printing process for the manufacture of crystalline silicon solar cells, since the electronic paste will inevitably contaminate the table paper, screen, table, track and fixture, it will more or less occur during the printing and transmission of silicon wafers. Contaminated by electronic paste, the surface leakage current along the edge of the battery will be generated, which will affect the conversion efficiency, and seriously cause hot spots and leakage, which will affect the yield and reliability

In order to reduce edge leakage, usually the aluminum back field is 0.5mm-1mm away from the edge of the silicon wafer. If it is less than 0.5mm, once the printing is offset or the edge is stained during the printing process, the edge leakage current will be too large, causing the battery chip short circuit