Crystalline silicon battery with edge leakage prevention and preparation method thereof

Abstract

The invention discloses an anti-edge-leakage crystalline silicon battery and a preparation method thereof, which comprises the following steps of: coating a layer of high-temperature insulating film on the edge of a battery plate. The thickness of the high-temperature insulating film is 25-40Mum. The prepared battery plate comprises high-temperature-resistant insulating film at the edge of periphery. The height of the high-temperature insulating film is the same as the thickness of the silicon substrate layer. The thickness of the film is 25-40Mum. According to the invention, the edge leakagecaused by the metal slurry in the screen printing process can be avoided, and meanwhile, the conversion efficiency of the battery is improved due to the bigger area of the aluminum back field.

Description

technical field [0001] The invention belongs to the field of manufacturing crystalline silicon solar cells, and in particular relates to a crystalline silicon cell capable of preventing edge leakage and a preparation method thereof. Background technique [0002] In the screen printing process for the manufacture of crystalline silicon solar cells, since the electronic paste will inevitably contaminate the table paper, screen, table, track, and fixture, it will more or less occur during the printing and transmission of silicon wafers. Contaminated by electronic paste, surface leakage current along the edge of the battery will be generated, which will affect the conversion efficiency, and seriously cause hot spots and leakage, which will affect the yield and reliability. In order to reduce the edge leakage, usually the aluminum back field is 0.5mm-1mm away from the edge of the silicon wafer. If it is less than 0.5mm, in the printing process, once the printing is offset or the ...

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Problems solved by technology

[0002] In the screen printing process for the manufacture of crystalline silicon solar cells, since the electronic paste will inevitably contaminate the table paper, screen, table, track, and fixture, it will more or less occur during the printing and transmission of silicon wafers. Contaminated by electronic paste, surface leakage current along the edge of the battery will be generated, which will affect the conversion efficiency, and seriously cause hot spots and leakage, which will affect the yield and reliability

In order to reduce the edge leakage, usually the aluminum back field is 0.5mm-1mm away from the edge of the silicon chip. If it is less than 0.5mm, in the printing process, once the printing is offset or the edge is stained, it will cause excessive edge leakage current , resulting in a short circuit of the cell

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