Silicon wafer carrier plate, carrier plate electrode device and coating equipment

A technology of electrode device and carrier plate, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems affecting the coating effect of silicon wafers, uneven electric field, etc.

Pending Publication Date: 2021-01-15
CHANGZHOU S C EXACT EQUIP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the coating process of the existing PECVD coating equipment, there is a problem of uneven electric field between the high-frequency electrode plate and the carrier plate on which the silicon wafer is placed, which affects the coating effect on the silicon wafer.

Method used

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  • Silicon wafer carrier plate, carrier plate electrode device and coating equipment
  • Silicon wafer carrier plate, carrier plate electrode device and coating equipment
  • Silicon wafer carrier plate, carrier plate electrode device and coating equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] In this embodiment, a silicon wafer carrier 1 is provided. Such as figure 1 and figure 2 As shown, the silicon wafer carrier 1 includes a carrier frame 11 , a plurality of first electrode assemblies 12 and a tray 13 .

[0053] The carrier frame 11 serves as a mounting base for the first electrode assembly 12 and the tray 13 . A plurality of first electrode assemblies 12 are arranged at intervals on the inner side of the carrier frame 11 along the circumferential direction of the carrier frame 11, and the tray 13 is arranged on the top of the plurality of first electrode assemblies 12, and the silicon wafer is carried by the tray 13 to realize silicon The wafer moves with the silicon wafer carrier 1 so as to enter the coating process cavity 21 for coating process. Wherein, the first electrode assembly 12 extends to the bottom of the carrier frame 11, so that when the silicon chip carrier 1 enters the coating process chamber 21 as a whole, the bottom of the first elec...

Embodiment 2

[0056] In this embodiment, a silicon wafer carrier 1 is provided, which is further improved on the basis of the first embodiment.

[0057] Such as Figure 2 to Figure 4 As shown, the first electrode assembly 12 includes a fixing block 121 and a first electrode sheet 122 . The fixing block 121 is connected to the inner side of the carrier frame 11 , and the first electrode sheet 122 is connected to an end of the fixing block 121 away from the carrier frame 11 , so as to realize the installation and fixing of the first electrode sheet 122 . The top of the first electrode sheet 122 stretches out to the top of the fixed block 121, to support the tray 13 by the top of the first electrode sheet 122; When the silicon chip carrier 1 enters the coating process cavity 21, the bottom of the first electrode sheet 122 contacts the supporting structure of the coating process cavity 21, so that the silicon wafer placed on the tray 13 can pass through The tray 13 and the first electrode she...

Embodiment 3

[0061] This embodiment provides a silicon chip carrier 1, which is further improved on the basis of the second embodiment.

[0062] Such as Figure 5 and Figure 6As shown, the carrier frame 11 further includes at least one support rod 14 and a plurality of second electrode sheets 15 . The supporting rods 14 are arranged in the carrier frame 11, and the two ends of the supporting rods 14 are connected with the carrier frame 11, so that the carrier frame 11 and the supporting rods 14 form a plurality of frame-shaped structures, forming a grid-like structure as a whole , so that a tray 13 is correspondingly provided in each frame structure. Wherein, the number of support rods 14 can be specifically set according to the shape and size of the carrier frame 11 and the tray 13 . When the number of support rods 14 is multiple, the multiple support rods 14 can be arranged sequentially in the same direction, or can be arranged crosswise.

[0063] A plurality of second electrode she...

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PUM

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Abstract

The invention provides a silicon wafer carrier plate, a carrier plate electrode device and coating equipment. The silicon wafer carrier plate comprises a carrier plate frame, a plurality of first electrode assemblies, and a tray; the plurality of first electrode assemblies are arranged on the inner side of the carrier plate frame and are arranged at intervals along the circumferential direction ofthe carrier plate frame; the tray is arranged at the tops of the plurality of first electrode assemblies; the tray is used for placing silicon wafers; each first electrode assembly extends to the bottom of the carrier plate frame and is used for making contact with a coating process cavity; and the silicon wafers placed on the tray can be conducted with the coating process cavity through the trayand the first electrode assemblies. According to the technical scheme, the silicon wafers can be uniformly grounded through the matching between the silicon wafer carrier plate and the coating process cavity, the uniformity of an electric field between an electrode plate connected with high frequency and the silicon wafer carrier plate can be effectively enhanced, process gas can be uniformly attached to the surface of the silicon wafers in the coating process, the coating effect is favorably improved, and the production efficiency of silicon wafer products is improved.

Description

technical field [0001] The present application relates to the technical field of silicon wafer coating process equipment, in particular, to a silicon wafer carrier, a carrier electrode device and a coating device. Background technique [0002] PECVD (Plasma Enhanced Chemical Vapor Deposition, Plasma Enhanced Chemical Vapor Deposition) is one of the commonly used coating methods in solar cell production, and the corresponding PECVD coating equipment is usually used to coat silicon wafers. During the coating process of the existing PECVD coating equipment, there is a problem of uneven electric field between the high-frequency electrode plate and the carrier plate on which the silicon wafer is placed, which affects the coating effect on the silicon wafer. Contents of the invention [0003] According to the embodiments of the present invention, it is intended to improve at least one of the technical problems existing in the prior art or the related art. [0004] Therefore, an...

Claims

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Application Information

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IPC IPC(8): C23C16/458C23C16/50
CPCC23C16/4586C23C16/50
Inventor 左国军梁建军朱海剑
Owner CHANGZHOU S C EXACT EQUIP
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